Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Mamoru Ishizaki"'
Publikováno v:
Proceedings of the International Display Workshops. :919
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3492eb878caa6f463cdbd06bb0de9c
https://doi.org/10.36463/idw.2021.0919
https://doi.org/10.36463/idw.2021.0919
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2019:J10207
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f691cbe7d15b8b13ac33a4055708640b
https://doi.org/10.1299/jsmemecj.2019.j10207
https://doi.org/10.1299/jsmemecj.2019.j10207
Autor:
Ryohei Matsubara, Norimasa Sekine, Manabu Ito, Masato Kon, Noriaki Ikeda, Chihiro Miyazaki, Yoshiko Ugajin, Mamoru Ishizaki
Publikováno v:
physica status solidi (a). 205:1885-1894
Applications of amorphous oxide TFTs to electrophoretic display have been demonstrated. First, we focus attention on the low process temperature of amorphous In-Ga-Zn-O (a-IGZO) TFT and successfully fabricated a-IGZO TFT array onto poly-ethylene-naph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce44fd51a255110234a847fe9087accc
https://doi.org/10.1002/pssa.200778910
https://doi.org/10.1002/pssa.200778910
Autor:
Mamoru Ishizaki, C. Miyazaki, K. Hatta, Yoshiko Ugajin, T. Okubo, Ryohei Matsubara, Norimasa Sekine, Manabu Ito, M. Kon, N. Ikeda
Publikováno v:
Journal of Non-Crystalline Solids. 354:2777-2782
Application of amorphous oxide thin film transistor (TFT) to electronic paper is demonstrated. We have fabricated a 4-in. bottom gate amorphous In–Ga–Zn–O (a-IGZO) TFT array and combined it with an electrophoretic frontplane. The resolution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::685852aa779267ed6c8f91592706e201
https://doi.org/10.1016/j.jnoncrysol.2007.10.083
https://doi.org/10.1016/j.jnoncrysol.2007.10.083
Autor:
Norimasa Sekine, Manabu Ito, Mamoru Ishizaki, Yoshiko Ugajin, Chihiro Miyazaki, Masato Kon, Noriaki Ikeda
Publikováno v:
IEICE Transactions on Electronics. :2105-2111
We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50811d25c625f9eec7b19d255f89b27a
https://doi.org/10.1093/ietele/e90-c.11.2105
https://doi.org/10.1093/ietele/e90-c.11.2105
Publikováno v:
Japanese Journal of Applied Physics. 33:7171
New field emitter arrays (FEAs), called cross-edge-structured vertical FEAs, were fabricated and characterized. Chromium (Cr) emitters and molybdenum/Cr emitters were tested. The anode-current fraction was 50%, being improved in comparison with that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14963d05834fad5c50443828e74e863c
https://doi.org/10.1143/jjap.33.7171
https://doi.org/10.1143/jjap.33.7171
Publikováno v:
Japanese Journal of Applied Physics. 30:L435
Atomic layer epitaxy (ALE) of AlAs has been achieved by using nominally pure dimethylaluminumhydride as the Al source, instead of its mixing with trimethylaluminum which was used in our previous ALE growth of ALE. Short period superlattices of (AlAs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d651a3ea717c50d311ae88e789d2685
https://doi.org/10.1143/jjap.30.l435
https://doi.org/10.1143/jjap.30.l435
Publikováno v:
Japanese Journal of Applied Physics. 29:1523
We have investigated the substrate temperature dependence of deposition rates for Ga, Al and As layers formed on fused quartz (Suprasil) substrates by ArF excimer laser-assisted chemical vapor deposition using trimethylgallium, trimethylaluminum and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab274c559364cb0fc1698c7de3c7b992
https://doi.org/10.1143/jjap.29.1523
https://doi.org/10.1143/jjap.29.1523
Publikováno v:
Japanese Journal of Applied Physics. 26:L1251
Laser-irradiation effects on the incorporation of n- and p-type impurities in GaAs have been studied by irradiating the substrate with an ArF excimer laser light during MOVPE growth. An n-type dopant source of TMSi is decomposed effectively by laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e191d7278ff2d25ebf9d5b4f22426c34
https://doi.org/10.1143/jjap.26.l1251
https://doi.org/10.1143/jjap.26.l1251
Publikováno v:
Japanese Journal of Applied Physics. 28:L1899
We have fabricated a pair of GaAs MESFETs operating in different modes, i.e., enhancement and depletion modes, on a single epitaxial wafer on the basis of laser-assisted metalorganic vapor phase epitaxy using tetramethylsilane as a photosensitive n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48655063cf66da321601aeb4982e0d76
https://doi.org/10.1143/jjap.28.l1899
https://doi.org/10.1143/jjap.28.l1899