Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Mami N. Fujii"'
Autor:
Chaiyanan Kulchaisit, Juan Paolo Soria Bermundo, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095001-095001-8 (2018)
We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibil
Externí odkaz:
https://doaj.org/article/7619257c801746c69b17454787c58c78
Autor:
Mami N. Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R. T. Mofrad, Juan Paolo Soria Bermundo, Emi Kawashima, Shigekazu Tomai, Koki Yano, Yukiharu Uraoka
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065216-065216-10 (2016)
In a previous work, we reported the high field effect mobility of ZnO-doped In2O3 (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding
Externí odkaz:
https://doaj.org/article/a01243d929c1490da5b4b873b30cded9
Autor:
Mami N. Fujii, Masaki Tanaka, Takumi Tsuno, Yusuke Hashimoto, Hiroto Tomita, Soichiro Takeuchi, Shunjo Koga, Zexu Sun, John Isaac Enriquez, Yoshitada Morikawa, Jun Mizuno, Mutsunori Uenuma, Yukiharu Uraoka, Tomohiro Matsushita
Publikováno v:
Nano Letters. 23:1189-1194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8fc79a2f6e62bf4d8db8bf214f2f486
https://doi.org/10.1021/acs.nanolett.2c04176
https://doi.org/10.1021/acs.nanolett.2c04176
Autor:
Tomohiro Matsushita, Yusuke Hashimoto, Hiroto Tomita, Zexu Sun, Sota Kawamura, Mami N. Fujii, Jun Mizuno
Publikováno v:
e-Journal of Surface Science and Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c1439839f73e2e0c47b37165a102e1e
https://doi.org/10.1380/ejssnt.2023-027
https://doi.org/10.1380/ejssnt.2023-027
Publikováno v:
Amorphous Oxide Semiconductors. :315-331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46439d33a17eb213db64add49f408721
https://doi.org/10.1002/9781119715641.ch13
https://doi.org/10.1002/9781119715641.ch13
Autor:
Yukiharu Uraoka, Mami N. Fujii, Juan Paolo Bermundo, Ryoko Miyanaga, Takanori Takahashi, Mutsunori Uenuma
Publikováno v:
SID Symposium Digest of Technical Papers. 52:395-398
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd31e334da2460fbd5fe3f88aac6a142
https://doi.org/10.1002/sdtp.15134
https://doi.org/10.1002/sdtp.15134
Autor:
Aimi Syairah Safaruddin, Yoshida Naofumi, Toshiaki Nonaka, Yasuaki Ishikawa, Mami N. Fujii, Yukiharu Uraoka, Juan Paolo Bermundo
Publikováno v:
IEEE Electron Device Letters. 41:1372-1375
We report the enhancement in the electrical performance of solution-processed amorphous InZnO ( $a$ -IZO) thin-film transistors (TFTs) through incorporation of low-temperature photosensitive polysilsesquioxane (P-PSQ) passivation. P-PSQ passivated TF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c966cdeeca4534eff9aebeae253a55
https://doi.org/10.1109/led.2020.3011683
https://doi.org/10.1109/led.2020.3011683
Autor:
Yasuaki Ishikawa, Mutsunori Uenuma, Yukiharu Uraoka, Kahori Kise, Juan Paolo Bermundo, Mami N. Fujii, Takanori Takahashi
Publikováno v:
SID Symposium Digest of Technical Papers. 51:71-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137738f7656793547e10c1037f4dfd87
https://doi.org/10.1002/sdtp.13807
https://doi.org/10.1002/sdtp.13807
Autor:
Yasuaki Ishikawa, Juan Paolo Bermundo, Yukiharu Uraoka, Mami N. Fujii, Michael Paul A. Jallorina
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1333-1336
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00c746f714d523777f38d366e40081d9
https://doi.org/10.1002/sdtp.13181
https://doi.org/10.1002/sdtp.13181
Autor:
Juan Paolo Bermundo, Dianne C. Corsino, Chaiyanan Kulchaisit, Aimi Syairah, Hiroshi Ikenoue, Yasuaki Ishikawa, Mami N. Fujii, Yukiharu Uraoka
Publikováno v:
SID Symposium Digest of Technical Papers. 50:422-425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a03034aea231e0358a83287c9ca8081
https://doi.org/10.1002/sdtp.12946
https://doi.org/10.1002/sdtp.12946