Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Mamathamba Kalishettyhalli Mahadevaiah"'
Autor:
David Maldonado, Antonio Cantudo, Eduardo Perez, Rocio Romero-Zaliz, Emilio Perez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiah, Francisco Jimenez-Molinos, Christian Wenger, Juan Bautista Roldan
Publikováno v:
Frontiers in Neuroscience, Vol 17 (2023)
We characterize TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing. We analyze different features that allow the devices to mimic biological synapses and present the models to reproduce analytically some of the data measured. In particular
Externí odkaz:
https://doaj.org/article/95ea73c979c5439faa27a37bc7260aec
Autor:
Martin Drost, Steffen Marschmeyer, Mirko Fraschke, Oksana Fursenko, Florian Bärwolf, Ioan Costina, Mamathamba Kalishettyhalli Mahadevaiah, Marco Lisker
Publikováno v:
Micro and Nano Engineering, Vol 14, Iss , Pp 100102- (2022)
The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through‑silicon vias (TSV) fabrication. The process can be very demanding on the mask
Externí odkaz:
https://doaj.org/article/e7fa8a2a3c594386b2eef12583826da8
Autor:
Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger, Martin Ziegler
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-15 (2020)
Abstract Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition. The analogue and massive parallel in-memory computing in bio
Externí odkaz:
https://doaj.org/article/1a4c1d13dc044dc49d23d1a716766d64
Autor:
Eduardo Perez, Cristian Zambelli, Mamathamba Kalishettyhalli Mahadevaiah, Piero Olivo, Christian Wenger
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 740-747 (2019)
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the
Externí odkaz:
https://doaj.org/article/f6fb4f9b82524f629c1c4a2cc7d231a3
Autor:
Emilio Perez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiah, Tommaso Rizzi, Jianan Wen, Markus Ulbricht, Milos Krstic, Christian Wenger, Eduardo Perez
Publikováno v:
IEEE Transactions on Electron Devices. 70:2009-2014
Autor:
Emilio Perez-Bosch Quesada, Eduardo Perez, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger
Publikováno v:
IEEE Transactions on Electron Devices. 68:2693-2698
Achieving a reliable multilevel programming operation in resistive random access memory (RRAM) arrays is still a challenging task. In this work, we assessed the impact of the voltage step value used by the programming algorithm on the device-to-devic
Autor:
María Helena Castán Lanaspa, Eduardo Perez, Benjamín Sahelices Fernández, Guillermo Vinuesa Sanz, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger, Oscar G. Ossorio, Héctor García, Salvador Dueñas Carazo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
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Producción Científica
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
Autor:
Mai, Mamathamba Kalishettyhalli Mahadevaiah, Eduardo Perez, Marco Lisker, Markus Andreas Schubert, Emilio Perez-Bosch Quesada, Christian Wenger, Andreas
Publikováno v:
Electronics; Volume 11; Issue 10; Pages: 1540
The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technolo
Autor:
Piero Olivo, Cristian Zambelli, Eduardo Perez, Christian Wenger, Mamathamba Kalishettyhalli Mahadevaiah
Publikováno v:
Solid-State Electronics. 159:51-56
In this work, the increase on the filament conductivity during the 1st Reset operation, by using the incremental step pulse with verify algorithm, is investigated in HfO2-based 1T1R RRAM devices. A new approach is proposed in order to explain the inc
Autor:
M. Lisker, Andreas Mai, Steffen Marschmeyer, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger, Mirko Fraschke, Detlef Schmidt, Eduardo Perez
Publikováno v:
ECS Transactions. 92:211-221