Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Malte Czernohorsky"'
Autor:
Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng
Publikováno v:
Electronic Materials, Vol 2, Iss 3, Pp 344-369 (2021)
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to
Externí odkaz:
https://doaj.org/article/6a0badee24cb4cb1b98d56cb4bc03298
Autor:
Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel
Publikováno v:
Crystals, Vol 12, Iss 8, p 1115 (2022)
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal
Externí odkaz:
https://doaj.org/article/0baf95021d9545c98e4372aaf1f5863e
Autor:
Clemens Mart, Thomas Kämpfe, Kati Kühnel, Malte Czernohorsky, Sabine Kolodinski, Maciej Wiatr, Wenke Weinreich, Lukas M. Eng
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051120-051120-7 (2021)
The hafnium oxide material class is characterized by the coexistence of several polymorphs between which phase transitions are induced by means of composition and external electric fields. Pyroelectric materials, which convert heat into electrical en
Externí odkaz:
https://doaj.org/article/d96fc2b8bc62491a8479e4bd178f932f
Autor:
Konstantinos Falidas, Konstantin Mertens, Maximilian Everding, Malte Czernohorsky, Johannes Heitmann
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5103ca56bb9a30239e7e33d796691e44
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134346
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134346
Autor:
Robin Lehmkau, Doris Mutschall, Alena Kaiser, Martin Ebermann, Nobert Neumann, Malte Czernohorsky, Markus Neuber, Karla Hiller, Jan Seiler, Toni D. Großmann, Alexey Shaporin, Jens Lienig
Publikováno v:
Optical Engineering. 61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7183b6dc45d7a76798bff9d5d90751
https://doi.org/10.1117/1.oe.61.12.127102
https://doi.org/10.1117/1.oe.61.12.127102
Autor:
Konstantinos Efstathios, Falidas, Kati, Kühnel, Matthias, Rudolph, Maximilian B, Everding, Malte, Czernohorsky, Johannes, Heitmann
Publikováno v:
Materials (Basel, Switzerland). 15(23)
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4fea4b35d772b328532894fe7c60eb9a
https://pubmed.ncbi.nlm.nih.gov/36499822
https://pubmed.ncbi.nlm.nih.gov/36499822
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db4644c91f1fa7316056be2fab633bf
https://doi.org/10.1109/icicdt56182.2022.9933079
https://doi.org/10.1109/icicdt56182.2022.9933079
Autor:
Konstantinos Falidas, Konstantin Mertens, Raik Hoffmann, Malte Czernohorsky, Johannes Heitmann
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c0a5034a3cc86b91bb83ae2ea05565
https://doi.org/10.1109/vlsi-tsa54299.2022.9770977
https://doi.org/10.1109/vlsi-tsa54299.2022.9770977
Fully CMOS-compatible pyroelectric infrared detector based on doped HfO2 thin film in 3D-integration
Autor:
Robin Lehmkau, Doris Mutschall, Alena Kaiser, Martin Ebermann, Norbert Neumann, Malte Czernohorsky, Markus Neuber, Karla Hiller, Jan Seiler, Toni Großmann
Publikováno v:
Oxide-based Materials and Devices XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c108fc728a28f03119608d0545f7d9
https://doi.org/10.1117/12.2607271
https://doi.org/10.1117/12.2607271
Autor:
Ayse Sunbul, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kuhnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kampfe, Lukas M. Eng
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS)
International Reliability Physics Symposium (IRPS)
International Reliability Physics Symposium (IRPS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7556486c3c3fee9cb0acb15b2abf3c5
https://doi.org/10.1109/irps48227.2022.9764585
https://doi.org/10.1109/irps48227.2022.9764585