Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Malika Berouaken"'
Autor:
Moustafa Debbab, Nassera Ghellai, Omolayo M. Ikumapayi, Noureddine Gabouze, Giulio Lorenzini, Chafiaa Yaddadene, Malika Berouaken, Younes Menni
Publikováno v:
Journal of New Materials for Electrochemical Systems. 25:293-300
In this work, electrodeposition was used to produce thin zinc oxide layers on n-type silicon substrates. It has been investigated how annealing at 400∘C affects the deposit's morphological and structural characteristics. SEM, X-ray diffraction, and
Autor:
Malika Berouaken, Chafiaa Yaddaden, Habiba Ferdjouni, Chaima Torki, Mohamed Maoudj, Katia Chebout, Maha Ayat, Hamid Menari, Amar Manseri, Noureddine Gabouze
Publikováno v:
Applied Physics A. 128
Autor:
Meymoun Belaoui, Malika Berouaken, Chafiaa Yaddaden, Amar Manseri, Nassera Ghellai, Naser-Eddine Chabane Sari, Noureddine Gabouze
Publikováno v:
Nano-Structures & Nano-Objects. 34:100972
Publikováno v:
Journal of Coatings Technology and Research. 18:53-62
An electrochemical biosensor for organophosphorus pesticides detection has been developed by immobilizing acetylcholinesterase (AChE) enzyme, through a multi-step functionalization process, on porous silicon (PSi) surface. The PSi surface was functio
Autor:
Noureddine Gabouze, N. Ghellai, Moustafa Debbab, Meymoun Belaoui, Malika Berouaken, Chafiaa Yaddadene
In this work, thins films of zinc oxide were deposited on n-type silicon substrates by chemical electrodeposition. The effect of annealing temperature from 200 ° C to 600 ° C, with a step of 100 ° C, on the structural and morphological properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df015a7c63850b7294137d7c4f498278
https://doi.org/10.21203/rs.3.rs-1017928/v1
https://doi.org/10.21203/rs.3.rs-1017928/v1
Autor:
Chafiaa Yaddadene, Malika Berouaken, Maha Ayat, Mohamed Kechouane, Noureddine Gabouze, Katia Ayouz, Luca Boarino
Publikováno v:
Silicon. 11:2669-2674
Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure
Autor:
Rezak Alkama, M. Maoudj, Chafiaa Yaddadene, L. Talbi, Noureddine Gabouze, Malika Berouaken, Hamid Menari
Publikováno v:
Applied Physics A. 126
In the present work, we report the deposition of vanadium pentoxide (V2O5) thin film on the quartz crystal microbalance (QCM) using vacuum thermal evaporation method followed by rapid thermal annealing (RTA) in oxygen atmosphere (O2),for gas sensing
Autor:
Maha Ayat, Noureddine Gabouze, Malika Berouaken, Katia Chebout, Sabrina Belaid, Hamid Menari, Chafiaa Yaddadene
Publikováno v:
ICREEC 2019 ISBN: 9789811554438
Air pollution, which continues to increase, gives rise to considerable concern. It is generated by energy production, industrial activities, agriculture and transport. The main gases responsible for this pollution are sulfur dioxide (SO2), nitrogen o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350b1db3fdd38a4c36f803bc3b2c63dd
https://doi.org/10.1007/978-981-15-5444-5_79
https://doi.org/10.1007/978-981-15-5444-5_79
Autor:
Noureddine Gabouze, A. Manseri, Katia Chebout, Hamid Menari, S. Sam, L. Talbi, A. Boucheham, Malika Berouaken, Rezak Alkama
Publikováno v:
Arabian Journal for Science and Engineering. 43:5957-5963
A gas-sensing device based on quartz crystal microbalance (QCM) covered with vanadium oxide thin film has been elaborated to detect $$\hbox {CO}_{2}$$ gas at room temperature. Vanadium oxide thin films were deposited onto QCM substrates by vacuum the
Autor:
Y. Belkacem, Noureddine Gabouze, L. Talbi, Malika Berouaken, Aissa Keffous, K. Khaldi, Mohamed Trari, Hamid Menari
Publikováno v:
Journal of Solid State Electrochemistry. 22:1123-1130
In this work, we have elaborated and characterized polyaniline (PANI) thin films doped with sulfuric acid (H2SO4) using cyclic voltammetry (CV). The PANI has been electrodeposited onto hydrogenated amorphous silicon carbide (a-SiC:H) films, obtained