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pro vyhledávání: '"Malik, Sambhu P."'
Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode. The CP en
Externí odkaz:
http://arxiv.org/abs/2212.13699
Publikováno v:
In Microelectronics Reliability February 2024 153
