Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Maliha Noshin"'
Autor:
Kwang Jae Lee, Xinyi Wen, Yusuke Nakazato, Jaeyi Chun, Maliha Noshin, Chuanzhe Meng, Srabanti Chowdhury
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. Howe
Externí odkaz:
https://doaj.org/article/ad6b0a812fda4f18af3e748be1d9a132
Autor:
Kelly Woo, Zhengliang Bian, Maliha Noshin, Rafael Perez Martinez, Mohamadali Malakoutian, Bhawani Shankar, Srabanti Chowdhury
Publikováno v:
JPhys Materials, Vol 7, Iss 2, p 022003 (2024)
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material c
Externí odkaz:
https://doaj.org/article/3766fe074b8c43de93e0cef1dab58df8
Publikováno v:
AIP Advances, Vol 7, Iss 10, Pp 105110-105110-11 (2017)
Due to similar atomic bonding and electronic structure to graphene, hexagonal boron nitride (h-BN) has broad application prospects such as the design of next generation energy efficient nano-electronic devices. Practical design and efficient performa
Externí odkaz:
https://doaj.org/article/2403d10c6b6d43b794790e463adec73e
Publikováno v:
AIP Advances, Vol 7, Iss 1, Pp 015112-015112-7 (2017)
Equilibrium molecular dynamics simulation using 2nd generation Reactive Bond Order interatomic potential has been performed to model the thermal transport of nanometer sized zigzag defected graphene nanoribbons (GNRs) containing several types of vaca
Externí odkaz:
https://doaj.org/article/cafb330e9e594fda9460a3b9aa32b80f
Autor:
Kwang Jae, Lee, Yusuke, Nakazato, Jaeyi, Chun, Xinyi, Wen, Chuanzhe, Meng, Rohith, Soman, Maliha, Noshin, Srabanti, Chowdhury
Publikováno v:
Nanotechnology. 33(50)
Embedding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5b17a63df53d418ea593e5b99bd4effc
https://pubmed.ncbi.nlm.nih.gov/36103775
https://pubmed.ncbi.nlm.nih.gov/36103775
Publikováno v:
IEEE Electron Device Letters. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0b3e62ff02e93a3d03a3bcd9408292
https://doi.org/10.1109/led.2023.3279400
https://doi.org/10.1109/led.2023.3279400
Autor:
Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Xinyi Wen, Chuanzhe Meng, Rohith Soman, Maliha Noshin, Srabanti Chowdhury
Publikováno v:
Nanotechnology. 33:505704
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a53e9693dfa46c1a5ef776ab8540db8
https://doi.org/10.1088/1361-6528/ac91d7
https://doi.org/10.1088/1361-6528/ac91d7
Publikováno v:
Semiconductor Science and Technology. 37:075018
Vertical gallium nitride (GaN) devices are strong candidates for next generation power electronics. Such vertical devices almost always require epitaxial regrowth of GaN. However, impurities present at the regrowth interfaces result in device degrada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a2c626bd195c9b11df3628a1455ee0c
https://doi.org/10.1088/1361-6641/ac71bf
https://doi.org/10.1088/1361-6641/ac71bf
Publikováno v:
Materials Science in Semiconductor Processing. 129:105776
The compatibility of silicene with the semiconductor technology and its promise in thermoelectric and in optoelectronic devices demands modulation and optimization of its thermal and optical properties using structural modifications. Here we investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34b2994b50186e2065ad52943b13297
https://doi.org/10.1016/j.mssp.2021.105776
https://doi.org/10.1016/j.mssp.2021.105776
Autor:
Fahim Ferdous Hossain, Asir Intisar Khan, Samia Subrina, Maliha Noshin, Ishtiaque Ahmed Navid, H. M. Ahsan Uddin
Publikováno v:
Electronics, Vol 4, Iss 4, Pp 1109-1124 (2015)
Electronics
Volume 4
Issue 4
Pages 1109-1124
Electronics
Volume 4
Issue 4
Pages 1109-1124
The thermal conductivity of graphene nanoribbons (GNRs) has been investigated using equilibrium molecular dynamics (EMD) simulation based on Green-Kubo (GK) method to compare two interatomic potentials namely optimized Tersoff and 2nd generation Reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2af232054c5b8da85db3971b20b6a9e
https://doi.org/10.3390/electronics4041109
https://doi.org/10.3390/electronics4041109