Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mali Gao"'
Publikováno v:
Integration. 88:166-172
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14595036d0ac10ef4cc9e14c57f191f3
https://doi.org/10.1016/j.vlsi.2022.09.011
https://doi.org/10.1016/j.vlsi.2022.09.011
Autor:
Yuexin Gao, Xiaowu Cai, Zhengsheng Han, Yun Tang, Liqiang Ding, Ruirui Xia, Mali Gao, Fazhan Zhao
Publikováno v:
Journal of Power Electronics. 23:779-788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cf9819bfbe7f354e919e77a5832595
https://doi.org/10.1007/s43236-022-00570-3
https://doi.org/10.1007/s43236-022-00570-3
Publikováno v:
2022 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::699aa3d3a9643f38e5d5fc6cfad4d4fe
https://doi.org/10.1109/primeasia56064.2022.10103998
https://doi.org/10.1109/primeasia56064.2022.10103998
A high-voltage, external capacitor-less low-dropout regulator (HVLDO) with a transient enhancement loop is presented in this work. The proposed HVLDO is designed with high withstand voltage LDMOS transistors and a transient enhancement loop is propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be7b7066fa2303f78b5b0077b49d2346
https://doi.org/10.22541/au.166662726.60457974/v1
https://doi.org/10.22541/au.166662726.60457974/v1
Based on 0.35μm BCD process, a current-limiting and short-circuit protection circuit for low-side power switch is proposed. This design adopts the compact current comparator structure to achieve 2A current limiting protection and short circuit prote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5b2b6316a8bc9e9048441b7b6ea31ad
https://doi.org/10.21203/rs.3.rs-1764931/v1
https://doi.org/10.21203/rs.3.rs-1764931/v1
An on-chip integrated current sensor with high precision and large current range for smart power ICs
Publikováno v:
Microelectronics Journal. 134:105686
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12107968013ae50db145a6c57e8742f6
https://doi.org/10.1016/j.mejo.2022.105686
https://doi.org/10.1016/j.mejo.2022.105686
Publikováno v:
Electronics; Volume 12; Issue 6; Pages: 1409
Based on an 0.18 μm process, this paper proposes a fully integrated 1.8 V output 300 mA load low-dropout linear regulator (LDO) with a fast transient response. By inserting a transient-enhanced biased Class AB super source follower at the gate of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2ef0b67abd51624a9a96d953c0f180e
https://doi.org/10.3390/electronics12061409
https://doi.org/10.3390/electronics12061409
Publikováno v:
Microelectronics Reliability. 140:114860
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9b5931d791a6ad016ce781293aad98
https://doi.org/10.1016/j.microrel.2022.114860
https://doi.org/10.1016/j.microrel.2022.114860
Autor:
Yun Tang, Lei Wang, Xiaowu Cai, Dongqing Hu, Bin Dong, Liqiang Ding, Yuexin Gao, Ruirui Xia, Mali Gao, Shiping Wang, Jianying Dang, Fazhan Zhao, Bo Li
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53216b1b1431c82507d92d9f29050613
https://doi.org/10.1109/tns.2023.3273172
https://doi.org/10.1109/tns.2023.3273172