Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Malay Trivedi"'
Autor:
Shital Kiran Davangere Padmanabh, Snehal Ahire, Vinay Mulchandani, Mira Jani Upendrabhai, Malay Trivedi, Aum Bharat Joshi
Publikováno v:
Journal of Indian Society of Pedodontics and Preventive Dentistry, Vol 40, Iss 4, Pp 417-422 (2022)
Background: Emojis are used to communicate emotional content as conversational indicators. Emojis of human faces are unrivaled in communication since they can discern between several basic emotions with great precision while also being universal. Aim
Externí odkaz:
https://doaj.org/article/e5fc552350fd4e5bbd8415b317f4ac9e
Autor:
Shital Kiran Davangere Padmanabh, Mavaddah Makhiya, Vinay Mulchandani, Vikram Jhamb, Malay Trivedi, Mira Jani Upendrabhai
Publikováno v:
Saudi Journal of Oral Sciences, Vol 9, Iss 3, Pp 185-189 (2022)
Introduction: One of the most important causative factors in the onset of dental caries and periodontal disorders is dental plaque. Mouthwashes and dentifrices, such as toothpaste, are examples of chemical plaque management treatments. Toothpaste is
Externí odkaz:
https://doaj.org/article/06659b6ff6a74ed284422ab158deae16
Publikováno v:
IEEE Transactions on Electron Devices. 49:1648-1656
This paper presents a study of the performance of high-voltage Si and 4H-SiC diodes in a DC-DC buck converter. Device operation in both hard- and zero-voltage switching conditions is presented with the help of measurements and two-dimensional (2-D) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c8c38d499f2a55d549c4aa99856ba9
https://doi.org/10.1109/ted.2002.802645
https://doi.org/10.1109/ted.2002.802645
Autor:
A. Mulay, Krishna Shenai, S. Atkinson, Malay Trivedi, R. Vijayalakshmi, S. Abedinpour, E.A. McShane
Publikováno v:
IEEE Transactions on Education. 45:57-64
An integrated power electronics curriculum has been implemented in the Department of Electrical and Computer Engineering at the University of Illinois, Chicago. This paper describes the development of a set of hands-on laboratory experiments to accom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a7918bd6ce3b5418e6addf5c9a3130a
https://doi.org/10.1109/13.983222
https://doi.org/10.1109/13.983222
Autor:
Malay Trivedi, Krishna Shenai
Publikováno v:
IEEE Transactions on Electron Devices. 46:1274-1282
Soft switching involves turning the semiconductor device on or off with minimal switching stress. Zero voltage switching (ZVS) and zero current switching (ZCS) are the two most popular variants of soft switching schemes. The turn-off performance of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4eac27a610ed3dbd4696570da0e3bb
https://doi.org/10.1109/16.766898
https://doi.org/10.1109/16.766898
Autor:
Krishna Shenai, Malay Trivedi
Publikováno v:
Journal of Applied Physics. 85:6889-6897
Applicability of GaN in unipolar and bipolar devices for high-power electronic applications is evaluated with respect to similar devices based on other materials. Specific resistance is used as a measure of unipolar performance. In order to evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fb9c65ab20380136306d03bad0e25a
https://doi.org/10.1063/1.370208
https://doi.org/10.1063/1.370208
Publikováno v:
IEEE Transactions on Electron Devices. 46:1794-1802
This paper presents an analytical study of the RF performance of Si power MOSFET's. Si MOSFET's are rapidly becoming popular in RF applications. Although circuit simulation models have been presented explaining the static performance of these devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fa240906afdcb800820c6ebfa983bb
https://doi.org/10.1109/16.777172
https://doi.org/10.1109/16.777172
Autor:
Malay Trivedi, Krishna Shenai
Publikováno v:
IEEE Transactions on Power Electronics. 14:108-116
The application of insulated gate bipolar transistors (IGBTs) in high-power converters subjects them to high-transient electrical stress such as short-circuit switching and turn-off under clamped inductive load (CIL). Robustness of IGBTs under high-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9f21bfb4c930ded9ac8068bb49b741
https://doi.org/10.1109/63.737598
https://doi.org/10.1109/63.737598
Autor:
Malay Trivedi, Krishna Shenai
Publikováno v:
Journal of Applied Physics. 84:2091-2098
This article reports an anomalous snap-back in the forward I–V characteristics of high power rectifiers having a buffer layer. The buffer layer is located at the rectifying junction. It is shown with the help of theoretical analysis and numerical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af3fd16a166616967b55406a41ab0bc
https://doi.org/10.1063/1.368356
https://doi.org/10.1063/1.368356
Autor:
Krishna Shenai, Malay Trivedi
Publikováno v:
IEEE Transactions on Electron Devices. 45:313-320
This paper reports the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions. Short-circuit performance of IGBT's has been studied in detail with the aid of extensive measurements and numerical simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9db2b6a704ad610ee945e7906dc190
https://doi.org/10.1109/16.658847
https://doi.org/10.1109/16.658847