Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Malahat Tavassoli"'
Publikováno v:
SPIE Proceedings.
Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on an application of Scatterometry based metrology for evaluation of EUV photomask lithography. Measurements w
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
As technology nodes go down to 45nm and below, mask metrology becomes more important as the critical features decrease in size, while, at the same time, the number of measurements that need to be performed increases. OPC and RET put further burden on
Publikováno v:
SPIE Proceedings.
As PSM (Phase Shift Mask) process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating PSM need precise control of phase as a function of both pitch and target sizes. However conventiona
Publikováno v:
SPIE Proceedings.
As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. To ensure an accurate printing both attenuated and alternating PSMs (Phase Shift Masks) need precise control of phase as a function of bo
Autor:
Kyung M. Lee, Ute Buttgereit, Thomas Scherübl, Dirk Seidel, Sascha Perlitz, Malahat Tavassoli
Publikováno v:
SPIE Proceedings.
As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating Phase Shifting Masks (PSM) need precise control of phase as a function of both pitch and target sizes. Ho
Publikováno v:
SPIE Proceedings.
Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on a application of Scatterometry based metrology for evaluation of binary photomask lithography. Measurements
Autor:
Max Lau, Kyung M. Lee, Sascha Perlitz, Thomas Scherübl, Ki-Ho Baik, Ute Buttgereit, Barry Lieberman, Malahat Tavassoli
Publikováno v:
SPIE Proceedings.
As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating PSMs (Phase Shift Masks) need precise control of phase as a function of both pitch and target sizes. Howe
Publikováno v:
SPIE Proceedings.
Scatterometers are widely used for line/space or 2D structure measurements in both wafer and mask industries. This technology is now gaining more acceptance and is being applied 3D structures such as contacts and pads. Contact CDs and trench depth in
Publikováno v:
22nd European Mask and Lithography Conference.
Linewidth and etch depth control on the photomask is rapidly becoming a major concern in mask processing. In this paper, we report on a Scatterometry based metrology system that provides line width and etch profile measurements on Embedded PSMs on In
Scatterometry based CD and profile metrology of chrome-less masks using optical digital profilometry
Publikováno v:
SPIE Proceedings.
Control of line width and profile is gaining more importance in photomask processes as the industry moves toward 45nm node and beyond. In this paper we report scatterometer measurements of CD and profile data from chrome-less mask profile processed u