Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Makovejev S."'
Autor:
Kazemi Esfeh, B., Makovejev, S., Basso, Didier, Desbonnets, Eric, Kilchytska, V., Flandre, D., Raskin, J.-P.
Publikováno v:
In Solid State Electronics February 2017 128:121-128
Publikováno v:
In Solid State Electronics January 2016 115 Part B:219-224
Publikováno v:
In Solid State Electronics October 2015 112:78-84
Autor:
Makovejev, S., Kazemi Esfeh, B., Barral, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P., Kilchytska, V.
Publikováno v:
In Solid State Electronics June 2015 108:47-52
Autor:
Md Arshad, M.K., Makovejev, S., Olsen, S., Andrieu, F., Raskin, J.-P., Flandre, D., Kilchytska, V.
Publikováno v:
In Solid State Electronics December 2013 90:56-64
Autor:
Makovejev, S., Raskin, J.-P., Md Arshad, M.K., Flandre, D., Olsen, S., Andrieu, F., Kilchytska, V.
Publikováno v:
In Solid State Electronics May 2012 71:93-100
Autor:
Kilchytska, V., Md Arshad, M.K., Makovejev, S., Olsen, S., Andrieu, F., Poiroux, T., Faynot, O., Raskin, J.-P., Flandre, D.
Publikováno v:
In Solid State Electronics April 2012 70:50-58
Autor:
Yadav, S., Cardinael, Pieter, Zhao, M., Vondkar, K., Peralagu, U., Alian, A., Rodriguez, R., Khaled, A., Makovejev, S., Ekoga, E., Lederer, Dimitri, Raskin, Jean-Pierre, Parvais, B., Collaert, N.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::e87a2de2d570ebc0876b89790eba1763
https://hdl.handle.net/2078.1/270888
https://hdl.handle.net/2078.1/270888
Autor:
Cardinael, Pieter, Yadav, S., Zhao, M., Vondkar, K., Khaled, A., Rodriguez, R., Vermeersch, B., Makovejev, S., Ekoga, E., Pottrain, A., Waldron, N., Raskin, Jean-Pierre, Parvais, B., Collaert, N.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::cfc2f5dfca3e0385bb93079bb2fdca9f
https://hdl.handle.net/2078.1/269273
https://hdl.handle.net/2078.1/269273
Autor:
Kazemi Esfeh, Babak, Makovejev S., Allibert F., Raskin, Jean-Pierre, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::9cfc2255e3feb58ea7dcbcda2977def9
https://hdl.handle.net/2078.1/219183
https://hdl.handle.net/2078.1/219183