Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Makoto Yoshimi"'
Publikováno v:
The Proceedings of Conference of Hokuriku-Shinetsu Branch. :J021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::571f1b05da6616d726bf8b3a5c62ebee
https://doi.org/10.1299/jsmehs.2019.56.j021
https://doi.org/10.1299/jsmehs.2019.56.j021
Publikováno v:
The Proceedings of the Dynamics & Design Conference. 2018:605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479923c3dc2c9e312ed2ca9181c1d330
https://doi.org/10.1299/jsmedmc.2018.605
https://doi.org/10.1299/jsmedmc.2018.605
Publikováno v:
The Proceedings of Conference of Hokuriku-Shinetsu Branch. :G011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb7b17d969c6c878fe0e9f6641ea891f
https://doi.org/10.1299/jsmehs.2018.55.g011
https://doi.org/10.1299/jsmehs.2018.55.g011
Autor:
Makoto Yoshimi
Publikováno v:
Solid-State Electronics. 46:951-958
Current status and future directions of SOI technology are reviewed, by discussing advantages and issues to be solved for MPU, RF, and other low-power applications. The possibility of future MOSFET scaling is also discussed for novel SOI device struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc88f0bdaf75ff244bbc0db83d7b051
https://doi.org/10.1016/s0038-1101(02)00030-8
https://doi.org/10.1016/s0038-1101(02)00030-8
Autor:
Sadayuki Yoshitomi, Tomoaki Shino, Tsuneaki Fuse, Shigeru Kawanaka, Makoto Yoshimi, T. Yamada, H. Nii, J. Matsunaga, Yasuhiro Katsumata, Shigeyoshi Watanabe, K. Inoh
Publikováno v:
IEEE Transactions on Electron Devices. 49:414-421
High-frequency characteristics of SOI lateral BJTs designed for 2-GHz radio frequency (RF) applications are measured and compared for various link-base length, emitter width, and collector structure. Based on experimental data and device simulation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1714f9b360715f12a844653709023658
https://doi.org/10.1109/16.987111
https://doi.org/10.1109/16.987111
Publikováno v:
The Proceedings of the Dynamics & Design Conference. 2017:517
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c814d0736cdd385c67fe94003d4a027
https://doi.org/10.1299/jsmedmc.2017.517
https://doi.org/10.1299/jsmedmc.2017.517
Autor:
T. Yamada, Yasuhiro Katsumata, Shigeru Kawanaka, Tomoaki Shino, Makoto Yoshimi, H. Nii, K. Inoh
Publikováno v:
IEEE Transactions on Electron Devices. 47:1536-1541
In this paper, a novel lateral bipolar transistor on thin film silicon-on-insulator (SOI) is presented. With a small emitter size of 0.12/spl times/3.0 /spl mu/m/sup 2/, low base resistance of 270 /spl Omega/ due to a novel Co silicided base electrod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c26e222b94c59650ecea1605e4489e
https://doi.org/10.1109/16.848304
https://doi.org/10.1109/16.848304
Publikováno v:
Thin Solid Films. 517:340-342
Thermal stability of strained SOI fabricated by Smart Cut technique was found to be high enough for the current Si process, particularly with SiO2 protection films. The strain states, in-plane and out-of-plane lattice constants, were found not to cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29ae26036f832105ed11c5fcbade3ad3
https://doi.org/10.1016/j.tsf.2008.08.154
https://doi.org/10.1016/j.tsf.2008.08.154
Autor:
Makoto Yoshimi, Kentarou Sawano, Atsushi Fukumoto, Yusuke Hoshi, Ian Cayrefourcq, Yasuhiro Shiraki
Publikováno v:
Japanese Journal of Applied Physics. 46:7294-7296
The strain state and thermal stability of strained-Si-on-insulator (sSOI) substrates fabricated by the Smart Cut® technique were precisely analyzed by X-ray diffraction reciprocal space mapping and Raman spectroscopy. It was demonstrated that the st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74e3a0ad5f1b17533ae3339cd05a551c
https://doi.org/10.1143/jjap.46.7294
https://doi.org/10.1143/jjap.46.7294
Publikováno v:
IEEE Transactions on Electron Devices. 44:2187-2192
SiGe layers were formed in source regions of partially-depleted 0.25-/spl mu/m SOI MOSFETs by Ge implantation, and the floating-body effect was investigated for this SiGe source structure. It is found that the increase of the Ge implantation dosage s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb36a78c5249db3cf5a5c30cad35d2a8
https://doi.org/10.1109/16.644634
https://doi.org/10.1109/16.644634