Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Makoto Tsutsue"'
Autor:
Shunsuke Isono, Tetsuo Satake, Shuji Hirao, Tetsuya Ueda, Takashi Hyakushima, Kenji Taki, Makoto Tsutsue, R. Sakaida, Kotaro Nomura, S. Kishimura, Naoki Torazawa
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
A stacked image sensor with a 0.9 μm pixel size fabricated by using organic photoconductive film (OPF) was realized. It is the first trial to introduce an active material, that is, an organic semiconductor into the BEOL process. This pixel structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811b44b60431d24c12b9751d20e0e650
https://doi.org/10.1109/iitc.2013.6615587
https://doi.org/10.1109/iitc.2013.6615587
Publikováno v:
Journal of Applied Physics. 78:4478-4486
We have found a hole trap related to hydrogen and carbon in p‐type crystalline silicon after hydrogen and deuterium injection by chemical etching and plasma exposure. It was found from deep‐level transient spectroscopy that this center is located
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccfcdafa0e0864c5b279fc076b083ead
https://doi.org/10.1063/1.359858
https://doi.org/10.1063/1.359858
Autor:
Tetsuya Ueda, Kanda Yusuke, Shuji Hirao, Kohei Seo, H. Okamura, K. Tomiyama, Daisuke Inagaki, Kotaro Nomura, Susumu Matsumoto, Kiyomi Hagihara, A. Iwasaki, Naoki Torazawa, T. Shigetoshi, Masayuki Watanabe, S. Suzuki, Toru Hinomura, Hayato Korogi, J. Shibata, T. Hamatani, Makoto Tsutsue, K. Tashiro, Takeshi Harada, Tatsuya Kabe, Muneyuki Matsumoto, Yasunori Morinaga, H. Shimizu, K. Kobayashi, T. Sasaki
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
High performance 32nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5c2d7556c7a3286d7f9b538bd27a00
https://doi.org/10.1109/iitc.2010.5510707
https://doi.org/10.1109/iitc.2010.5510707
Autor:
Makoto Tsutsue, Kinya Goto, Yoshihiro Oka, Toshihiro Ohtsuka, Etsuyoshi Kobori, Kazuyoshi Tsukamoto, Kohei Seo, Kotaro Nomura, Susumu Matsumoto, Tetsuya Ueda, Yumiko Mizukami
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
In order to control the characteristics of porogen-based porous SiOC film (k ≪ 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ceefb132d489f0162f2625d4c553f4a
https://doi.org/10.1109/iitc.2009.5090352
https://doi.org/10.1109/iitc.2009.5090352
Autor:
Makoto Tsutsue, Tetsuya Ueda, Moriaki Akazawa, Kohei Seo, Susumu Matsumoto, Hayato Korogi, S. Suzuki, Hiroyuki Chibahara, Hiroshi Miyatake, Kinya Goto, Yoshihiro Oka
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, Direct-CMP of a porous low-k film without a protective cap layer is required. However, the degradation of breakdown electric field (Ebd) has been on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcda2e99bcf67b5c272d0031999c53ca
https://doi.org/10.1109/iitc.2009.5090399
https://doi.org/10.1109/iitc.2009.5090399