Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Makoto Ohkura"'
Publikováno v:
SID Symposium Digest of Technical Papers. 43:838-841
In 2003, WLICC agreed to voluntarily reduce FCs emission to 0.82MMTCE by 2010. To achieve the target, improvement of abatement efficiency, development of cost-effective FCs massive abatement technology, adoption of substitute gases and increase of ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f081b4a921e47f7dd024418759fe55b
https://doi.org/10.1002/j.2168-0159.2012.tb05916.x
https://doi.org/10.1002/j.2168-0159.2012.tb05916.x
Publikováno v:
IEEE Transactions on Electron Devices. 57:429-436
The degradation characteristics of n- and p-channel polysilicon thin-film transistors (TFTs) under circuit operation were investigated by using CMOS inverter circuits consisting of n-channel TFTs with a lightly doped drain (LDD) structure and p-chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1deec07e1ae1a3d513605229a35b1a5e
https://doi.org/10.1109/ted.2009.2036808
https://doi.org/10.1109/ted.2009.2036808
Autor:
Toshio Miyazawa, Makoto Ohkura, Tetsufumi Kawamura, Mieko Matsumura, Takeshi Noda, Mutsuko Hatano, Takuo Kaitoh
Publikováno v:
IEEE Transactions on Electron Devices. 56:109-115
A model for predicting on-current degradation caused by drain-avalanche hot carriers in NMOS low-temperature polysilicon thin-film transistors (TFTs) is described. The amount of trapped charge caused by hot-carrier stress was estimated by using a mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5861d8dd3781681cb516e5d9f273eb0f
https://doi.org/10.1109/ted.2008.2008376
https://doi.org/10.1109/ted.2008.2008376
Publikováno v:
Japanese Journal of Applied Physics. 47:6217-6221
A polysrystalline silicon (poly-Si) layer prepared by selectively enlarging laser crystallization (SELAX) was post-annealed by excimer laser irradiation. The average grain width increased 26% because of partly merged grains, while the morphological t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e0a40fbb1697d6c28b79273ce61163
https://doi.org/10.1143/jjap.47.6217
https://doi.org/10.1143/jjap.47.6217
Publikováno v:
IEEE Transactions on Electron Devices. 54:2452-2459
The degradation mechanism in p-channel polysilicon thin-film transistors under negative-bias temperature (NBT) stress and pulse stress, which alternates NBT stress and drain-avalanche hot carrier (DAHC) stress, was investigated. An analysis of recove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52e5d6f091a528a39fd1e070671e367
https://doi.org/10.1109/ted.2007.901878
https://doi.org/10.1109/ted.2007.901878
Autor:
Mutsuko Hatano, Yoshiaki Toyota, Hirotaka Hamamura, Tai Mitsuharu, Mieko Matsumura, Makoto Ohkura
Publikováno v:
ECS Transactions. 8:33-38
The device performance and reliability of the SOI TFTs and the LTPS-TFTs were compared. Changing channel material from single-crystal Si to ELA poly-Si reduces mobility by 75%, and changing gate oxide material from thermal oxide to CVD oxide enhances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7396c2983488df21919881b030923e
https://doi.org/10.1149/1.2767283
https://doi.org/10.1149/1.2767283
Autor:
Masahiro Maki, Takahiro Ochiai, Toshio Miyazawa, Masateru Morimoto, Tohru Sasaki, Makoto Ohkura
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1258-1261
A transflective IPS-LCD without retardation films, which degrade transmissive contrast, is developed. This is realized by altering the voltage applied to the transmissive and the reflective region independently. A 2.36-in. LCD fabricated using this t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc64b991971e9974f9c8217a768a23b3
https://doi.org/10.1889/1.2785540
https://doi.org/10.1889/1.2785540
Autor:
Makoto Ohkura, Mieko Matsumura, Mutsuko Hatano, Takuo Kaitoh, Toshio Miyazawa, Takeshi Noda, Tetsufumi Kawamura
Publikováno v:
SID Symposium Digest of Technical Papers. 38:202-205
A unified model and a prediction technique for on-current degradation in NMOS low-temperature poly-Silicon thin-film transistors are presented. The resistance increase is expressed as a function of the stress-drain current and stress-drain voltage. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8151b68165d09e587ba74e3795fd7f
https://doi.org/10.1889/1.2785264
https://doi.org/10.1889/1.2785264
Autor:
Mieko Matsumura, Mutsuko Hatano, Hirotaka Hamamura, Makoto Ohkura, Toshio Miyazawa, Yoshiaki Toyota, Mitsuharu Tai
Publikováno v:
ECS Transactions. 3:35-41
Narrow frame size IPS-mode LCD with high resolution system-in- display have been developed utilizing hybrid laser crystallization technology: SELAX are applied to low-power, high-speed circuits, and conventional ELC are used for the high- voltage cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6213fb6e8db95e5b5c1382ce6ec64a0
https://doi.org/10.1149/1.2356332
https://doi.org/10.1149/1.2356332
Publikováno v:
IEEE Transactions on Electron Devices. 53:2280-2286
Pronounced device degradation and temperature dependence of p-channel polycrystalline silicon thin-film transistors (polysilicon TFTs) under pulse stress were investigated. This device degradation is due to the trap states produced by repetition betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e506689303b30b939913fa1b2d6fba
https://doi.org/10.1109/ted.2006.879680
https://doi.org/10.1109/ted.2006.879680