Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Makoto Monoi"'
Autor:
Nobukazu Teranishi, Kazuya Yonemoto, Shoji Kawahito, Hiromasa Funakoshi, Norifumi Egami, Katsuhiko Suzuki, Nobuhiko Mutoh, Ryushi Nishimura, Makoto Monoi
Publikováno v:
The Journal of the Institute of Image Information and Television Engineers. 54:912-919
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69de79e71a950e005b0294c6efea3c24
https://doi.org/10.3169/itej.54.912
https://doi.org/10.3169/itej.54.912
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a63f6497dfb297e4436b86b83ede4b
https://doi.org/10.1109/sispad.2013.6650659
https://doi.org/10.1109/sispad.2013.6650659
Publikováno v:
SPIE Proceedings.
For CMOS image sensors with pixel size under 3μm pixel, the pixel architecture in which several photodiodes share floating diffusion and transistors tends to be adopted in order to improve full well capacity and sensitivity. In spite even in the afo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e9235427fa09dc6bb1bff2c88fdfad7
https://doi.org/10.1117/12.805849
https://doi.org/10.1117/12.805849
Autor:
Makoto Monoi, Yasushi Itabashi, Syu Sasaki, Seiichi Mashiko, Masayuki Ooki, Junya Iwai, Hirokazu Sekine, Ken Tomita, Kumiko Dobashi, Hiroyuki Saito
Publikováno v:
SPIE Proceedings.
CCD is a continuum of MOS capacitors, so its big capacitance becomes one of the major disadvantages compared with CMOS image sensor, that cause not only large power dissipation but also other problems, such as generating an electro magnetic interfere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67818836d5bac03f164d5864818a3732
https://doi.org/10.1117/12.805631
https://doi.org/10.1117/12.805631
Publikováno v:
ISSCC
In order to shrink pixel sizes for mobile phone cameras, several shared-pixel architectures have previously been proposed [1–3]. However, the use of conventional shared-pixel architectures leads to a Gr/Gb sensitivity imbalance because the Gr pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb99e109f7201fb41e7f1af0a4f2143
https://doi.org/10.1109/isscc.2009.4977299
https://doi.org/10.1109/isscc.2009.4977299
Autor:
Makoto Monoi, Yoshitaka Egawa, A. Nakao, N. Kawai, Nagataka Tanaka, Y. Lida, Hiroto Honda, H. Seki
Publikováno v:
ISSCC
CMOS image sensors is important for mobile phone cameras. But, when very small pixel sizes are used, the sensor SNR is limited by photon shot noise. In order to improve the sensor SNR Honda and Luo proposed the use of a sensor with a white (W) pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f858d1ee060c3025c2278e0c0464412
https://doi.org/10.1109/isscc.2008.4523052
https://doi.org/10.1109/isscc.2008.4523052
Autor:
Hiroo Tsuruta, Yasuhiro Nakano, Masakazu Matsuura, Syu Sasaki, Yoshihiro Hayakawa, Makoto Monoi, Masao Takahashi, Takuji Yoshida, Minoru Kashiwagi
Publikováno v:
SPIE Proceedings.
CCD is a continuum of MOS capacitors, so its big capacitance becomes one of the major disadvantages compared with CMOS image sensor, that cause not only large power dissipation but also other problems, such as generating an electro magnetic interfere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68043db3ac2ceb398b2a7fa6fd3cc691
https://doi.org/10.1117/12.586228
https://doi.org/10.1117/12.586228
Autor:
Yasue, Toshio, Kitamura, Kazuya, Watabe, Toshihisa, Shimamoto, Hiroshi, Kosugi, Tomohiko, Watanabe, Takashi, Aoyama, Satoshi, Monoi, Makoto, Wei, Zhiheng, Kawahito, Shoji
Publikováno v:
IEEE Transactions on Electron Devices; Jan2016, Vol. 63 Issue 1, p153-161, 9p
Autor:
Sengoku, Mitsuhiro, Yoshimura, Hisao, Sugiura, Yuki, Shimizu, Sakiko, Hasumi, Ryoji, Monoi, Makoto
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2013, p400-403, 4p
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2013, pviii-xxiv, 17p