Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Makoto Konoto"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed, ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a promising candidate for the achievement of large VCMA coefficients. H
Externí odkaz:
https://doaj.org/article/ebeddc009d87473f817be658c24a50c1
Autor:
Takayuki Nozaki, Tomohiro Ichinose, Jun Uzuhashi, Tatsuya Yamamoto, Makoto Konoto, Kay Yakushiji, Tadakatsu Ohkubo, Shinji Yuasa
Publikováno v:
APL Materials, Vol 11, Iss 12, Pp 121106-121106-10 (2023)
We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA) effect for an ultrathin CoFeB layer in bottom-free type MgO-based magnetic tunnel junctions prepa
Externí odkaz:
https://doaj.org/article/f978501f119c43a1860e465b3ee2b86a
Autor:
Tomohiro Nozaki, Shingo Tamaru, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract There is urgent need for spintronics materials exhibiting a large voltage modulation effect to fulfill the great demand for high-speed, low-power-consumption information processing systems. Fcc-Co (111)-based systems are a promising option f
Externí odkaz:
https://doaj.org/article/29c5e36d0e88492e99d10058fe2df4f1
Autor:
Takayuki Nozaki, Tomohiro Nozaki, Hiroshige Onoda, Hiroyasu Nakayama, Tomohiro Ichinose, Tatsuya Yamamoto, Makoto Konoto, Shinji Yuasa
Publikováno v:
APL Materials, Vol 10, Iss 8, Pp 081103-081103-7 (2022)
The voltage-controlled magnetic anisotropy (VCMA) effect has been proposed as an energy efficient approach for controlling the direction of magnetization. To demonstrate the scalability of a voltage-controlled magnetoresistive random access memory,
Externí odkaz:
https://doaj.org/article/99badda2bb464684a22230ada953487c
Autor:
Tomohiro Nozaki, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035130-035130-6 (2020)
In this study, we investigated the effect of Co film thickness and Ru insertion on the magnetic domain structure of a Pt/Co/Ru/MgO system during the magnetization reversal process. It was observed that with increasing Co thickness, the magnetization
Externí odkaz:
https://doaj.org/article/97632112c7064090b298514762a09222
Autor:
Takayuki Nozaki, Masaki Endo, Masahito Tsujikawa, Tatsuya Yamamoto, Tomohiro Nozaki, Makoto Konoto, Hiroyuki Ohmori, Yutaka Higo, Hitoshi Kubota, Akio Fukushima, Masanori Hosomi, Masafumi Shirai, Yoshishige Suzuki, Shinji Yuasa
Publikováno v:
APL Materials, Vol 8, Iss 1, Pp 011108-011108-6 (2020)
We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1−x termination layer. The VCMA effect depends on the concentration of the CoxFe1−x alloy, and a large VCMA coefficient, as high as
Externí odkaz:
https://doaj.org/article/a4ab07d5f576467b820c51bbfc833231
Autor:
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Makoto Konoto, Shinji Yuasa
Publikováno v:
ACS Applied Electronic Materials. 5:2178-2183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fd457fcb21689a57145e413eeb06b3
https://doi.org/10.1021/acsaelm.3c00068
https://doi.org/10.1021/acsaelm.3c00068
Autor:
Takayuki Nozaki, Tomohiro Nozaki, Tatsuya Yamamoto, Makoto Konoto, Atsushi Sugihara, Kay Yakushiji, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa
Publikováno v:
NPG Asia Materials. 14
Perpendicular magnetic anisotropy (PMA) is becoming increasingly important in spintronics research, especially for high-density magnetoresistive random access memories (MRAMs). The PMA induced at an Fe/MgO interface is widely used in magnetic tunnel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f7242a593fbb5e8749227dedb0bdbc
https://doi.org/10.1038/s41427-021-00350-8
https://doi.org/10.1038/s41427-021-00350-8
Autor:
Atsushi Sugihara, Tomohiro Ichinose, Shingo Tamaru, Tatsuya Yamamoto, Makoto Konoto, Takayuki Nozaki, Shinji Yuasa
Publikováno v:
Applied Physics Express. 16:023003
We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ300 mm wafers at 100 K and investigated its eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3523a2fcb84c493018d7348c07755dbf
https://doi.org/10.35848/1882-0786/acbae1
https://doi.org/10.35848/1882-0786/acbae1
Autor:
Takayuki Nozaki, Tomohiro Nozaki, Tatsuya Yamamoto, Makoto Konoto, Atsushi Sugihara, Kay Yakushiji, Shinji Yuasa
Publikováno v:
Applied Physics Letters. 121:172401
Improving the perpendicular magnetic anisotropy (PMA) and voltage-controlled magnetic anisotropy (VCMA) properties are fundamentally important for the development of voltage-controlled magnetoresistive random access memories (VC-MRAM). Recently, we r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb6736f9161373f5d0539afc466016b
https://doi.org/10.1063/5.0122192
https://doi.org/10.1063/5.0122192