Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Makoto Kameno"'
Autor:
Hayato Koike, Toshio Suzuki, Yuichiro Ando, Tomoyuki Sasaki, Masashi Shiraishi, Makoto Kameno, Takayuki Tahara, Tohru Oikawa
Publikováno v:
Physical Review Applied. 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0661b329bacfcf1466ecaa959f95e35a
https://doi.org/10.1103/physrevapplied.9.039901
https://doi.org/10.1103/physrevapplied.9.039901
Autor:
Kazuhito Tanaka, Hayato Koike, Yoshishige Suzuki, Takayuki Tahara, Tohru Oikawa, Masashi Shiraishi, Yuichiro Ando, Tomoyuki Sasaki, Makoto Kameno, Shinji Miwa
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368e5f60ddd5ad1116bf8f9cbd5a522f
http://arxiv.org/abs/1601.00759
http://arxiv.org/abs/1601.00759
Autor:
Hayato Koike, Tomoyuki Sasaki, Tohru Oikawa, Toshio Suzuki, Yuichiro Ando, Makoto Kameno, Masashi Shiraishi, Takayuki Tahara
Publikováno v:
Physical Review Applied. 2
Although the traditional metal-on-semiconductor field-effect transistor (MOSFET) has been a workhorse in information processing for decades, we must now consider its successor. To make spintronics a reality, by analogy we need a ``spin MOSFET''. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab2eb2b8c693ef66ee65cdd3a3d9580
https://doi.org/10.1103/physrevapplied.2.034005
https://doi.org/10.1103/physrevapplied.2.034005
Autor:
Teruya Shinjo, Hayato Koike, Masashi Shiraishi, Tomoyuki Sasaki, Toshio Suzuki, Tohru Oikawa, Makoto Kameno, Yuichiro Ando
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5dc41eeeee60a113897877211edfcae
http://arxiv.org/abs/1401.3524
http://arxiv.org/abs/1401.3524
Autor:
Yoshishige Suzuki, Eiji Shikoh, Toshio Suzuki, Tomoyuki Sasaki, Masashi Shiraishi, Makoto Kameno, Tohru Oikawa
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and temperature-dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a3b268768bbaef00e0e2a7f2429d437
http://arxiv.org/abs/1110.4187
http://arxiv.org/abs/1110.4187
Autor:
Yoshishige Suzuki, Hayato Koike, Tomoyuki Sasaki, Kazuhito Tanaka, Shinji Miwa, Takayuki Tahara, Masashi Shiraishi, Makoto Kameno, Yuichiro Ando
Publikováno v:
Applied Physics Express. 8:113004
We experimentally demonstrate a Si spin metal–oxide–semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source–drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c1e38e8881e38621ee4d37f81f5c836
https://doi.org/10.7567/apex.8.113004
https://doi.org/10.7567/apex.8.113004
Autor:
Tohru Oikawa, Yoshishige Suzuki, Tomoyuki Sasaki, Makoto Kameno, Yuichiro Ando, Masashi Shiraishi, Toshio Suzuki, Eiji Shikoh, Teruya Shinjo
Publikováno v:
Applied Physics Letters. 101:122413
We investigated the effect of spin drift on spin accumulation in highly doped silicon (Si) by using a non-local three-terminal (NL-3T) and four-terminal (NL-4T) methods, and have clarified that the spin accumulation voltages in a NL-3T device were mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb98a9c273ffe725b8e080401b385a2
https://doi.org/10.1063/1.4754285
https://doi.org/10.1063/1.4754285
Autor:
Makoto Kameno, Yuichiro Ando, Teruya Shinjo, Hayato Koike, Tomoyuki Sasaki, Tohru Oikawa, Toshio Suzuki, Masashi Shiraishi
Publikováno v:
Applied Physics Letters; 3/3/2014, Vol. 104 Issue 9, p1-4, 4p, 3 Graphs
Autor:
Takayuki Tahara, Hayato Koike, Makoto Kameno, Tomoyuki Sasaki, Yuichiro Ando, Kazuhito Tanaka, Shinji Miwa, Yoshishige Suzuki, Masashi Shiraishi
Publikováno v:
Applied Physics Express; Nov2015, Vol. 8 Issue 11, p1-1, 1p
Autor:
Yasunori Aoki1, Makoto Kameno1, Yuichiro Ando1, Eiji Shikoh1, Yoshishige Suzuki1, Teruya Shinjo1, Masashi Shiraishi1 shiraishi@ee.es.osaka-u.ac.jp, Tomoyuki Sasaki2, Tohru Oikawa2, Toshio Suzuki3
Publikováno v:
Physical Review B: Condensed Matter & Materials Physics. Sep2012, Vol. 86 Issue 8, p1-1. 1p.