InP DHBT-based IC technology for high-speed data communications

Autor: Driad, R., Schneider, K., Makon, R. E., Lang, M., Nowotny, U., Aidam, R., Rüdiger Quay, Schlechtweg, M., Mikulla, M., Weimann, G.

Publikováno v: Driad, R. ; Schneider, K. ; Makon, R. E. ; Lang, M. ; Nowotny, U. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Mikulla, M. ; Weimann, G. (2005) InP DHBT-based IC technology for high-speed data communications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Web of Science

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology.High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak fT an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3383180f39c99c02b751473565528f25

Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range.

Autor: Makon, R.-E., Driad, R., Schneider, K., Aidam, R., Schlechtweg, M., Weimann, G.

Publikováno v: 2007 IEEE/MTT-S International Microwave Symposium; 2007, p649-652, 4p

Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications.

Autor: Driad, R., Lösch, R., Schneider, K., Makon, R. E., Ludwig, M., Weimann, G.

Publikováno v: Physica Status Solidi (C); Mar2006, Vol. 3 Issue 3, p456-460, 5p

Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs.

Autor: Makon, R .E.¹ robert.makon@iaf.fraunhofer.de, Lang, M.¹, Driad, R.¹, Schneider, K.¹, Ludwig, M.¹, Aidam, R.¹, Quay, R.¹, Schlechtweg, M.¹, Weimann, G.¹

Publikováno v: Electronics Letters (Institution of Engineering & Technology). 5/26/2005, Vol. 41 Issue 11, p644-646. 3p.

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