InP DHBT-based IC technology for high-speed data communications

Autor: Driad, R., Schneider, K., Makon, R. E., Lang, M., Nowotny, U., Aidam, R., Rüdiger Quay, Schlechtweg, M., Mikulla, M., Weimann, G.

Publikováno v: Driad, R. ; Schneider, K. ; Makon, R. E. ; Lang, M. ; Nowotny, U. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Mikulla, M. ; Weimann, G. (2005) InP DHBT-based IC technology for high-speed data communications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Web of Science

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology.High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak fT an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3383180f39c99c02b751473565528f25

Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range.

Autor: Makon, R.-E., Driad, R., Schneider, K., Aidam, R., Schlechtweg, M., Weimann, G.

Publikováno v: 2007 IEEE/MTT-S International Microwave Symposium; 2007, p649-652, 4p

InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s.

Autor: Makon, R. E., Driad, R., Lösch, R., Rosenzweig, J., Schlechtweg, M., Ambacher, O.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 12/3/2009, Vol. 45 Issue 25, p1340-1342, 3p, 1 Black and White Photograph, 4 Diagrams

Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz.

Autor: Makon, R. E.¹ robert.makon@iaf.fraunhofer.de, Driad, R.¹, Schneider, K.¹, Maßler, H.¹, Aidam, R.¹, Quay, R.¹, Schlechtweg, M.¹, Weimann, G.¹

Publikováno v: Electronics Letters (Institution of Engineering & Technology). 8/18/2005, Vol. 41 Issue 17, p961-963. 3p.

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