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Phosphorus redistribution in the surface region of heavily phosphorus doped silicon

Autor: Wen Biao Ying, Makio Iida, Yusuke Mizokawa, Y.B. Yu, Yoshitomo Kamiura, Kazunori Kawamoto

Publikováno v: Applied Surface Science. :561-565

Heavily phosphorus doped samples of both Si(100) and polycrystalline silicon (poly-Si) together with nondoped poly-Si were examined using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The surfaces were treated by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ff457ea3cb1b260719f84e0900bda03
https://doi.org/10.1016/0169-4332(96)00339-x

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Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon

Autor: Yoshitomo Kamiura, Y.B. Yu, Wen Biao Ying, Makio Iida, Yusuke Mizokawa, Kazunori Kawamoto

Publikováno v: Applied Surface Science. :556-560

Phosphorus redistribution and its chemical structure in the native oxide/Si as well as thermal oxides (∼ 30 nm)/Si were investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The Si substrates were bot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da6c111d63785b993420cb9edcac3e37
https://doi.org/10.1016/0169-4332(96)00338-8

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Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy

Autor: Yoshihiko Isobe, Makio Iida, Yoshitomo Kamiura, Yong Bing Yu, Wen Biao Ying, Yusuke Mizokawa, Masafumi Nishimatsu, Kazunori Kawamoto

Publikováno v: SHINKU. 38:295-298

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1a209c091162e762019b06e940e1606
https://doi.org/10.3131/jvsj.38.295

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53.4: Low Power Poly‐Si Reflective Color AMLCD with 1024 × 480 Pixels

Autor: Hideo Kataoka, Takayuki Fujioka, Masumitsu Ino, Hiroaki Ichikawa, Oka Taketo, Makio Iida

Publikováno v: SID Symposium Digest of Technical Papers. 31:1203-1205

A 23cm-diagonal, reflective color TFT-LCD with 1024H × 480V pixels using low-temperature poly-Si TFT has been developed for mobile-PC applications. The integrated selector switches require less area to implement drivers, which leads to a narrower ed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de807d8e3b79b4774de392e9e79457a2
https://doi.org/10.1889/1.1832881

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Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVD

Autor: Takeshi Furuta, Yukio Yasuda, Shigeaki Zaima, Yasuo Koide, Makio Iida

Publikováno v: Journal of The Electrochemical Society. 137:2876-2879

Electrical properties and conduction mechanisms of leakage current of tantalum pentoxide films have been studied. films were deposited by cold wall‐type, low‐pressure chemical vapor deposition (LPCVD), and then annealed at temperatures ranging fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa80bd08f76e0ec0abd7811b74849d54
https://doi.org/10.1149/1.2087091

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Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI Application

Autor: Makio Iida, Yukio Yasuda, Takeshi Furuta, Shigeaki Zaima

Publikováno v: Journal of The Electrochemical Society. 137:1297-1300

Preparation and electrical properties of tantalum pentoxide (Ta 2 O 5 ) films have been studied for the application to ultra large scale integrated circuits (ULSIs). Ta 2 O 5 films were deposited by a cold wall-type low-pressure chemical vapor deposi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f88c21314d0577a7b6fe7ad17909b0b
https://doi.org/10.1149/1.2086651

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