Resonant-tunneling-diode relaxation oscillator

Autor: Chen, C.L ^*, Mathews, R.H, Mahoney, L.J, Calawa, S.D, Sage, J.P, Molvar, K.M, Parker, C.D, Maki, P.A, Sollner, T.C.L.G

Publikováno v: In Solid State Electronics 2000 44(10):1853-1856

Spectral and random telegraph noise characterizations of low-frequency fluctuations in GaAs/Al/sub 0.4/Ga/sub 0.6/As resonant tunneling diodes.

Autor: Surya, C., Sze-Him Ng, Brown, E.R., Maki, P.A.

Publikováno v: IEEE Transactions on Electron Devices; 1994, Vol. 41 Issue 11, p2016-2022, 7p

New self-aligned planar resonant-tunneling diodes for monolithic circuits.

Autor: Chen, C.L., Mathews, R.H., Mahoney, L.J., Maki, P.A., Molvar, K.M., Sage, J.P., Fitch, G.L., Sollner, T.C.L.G.

Publikováno v: IEEE Electron Device Letters; 1997, Vol. 18 Issue 10, p489-491, 3p

The Monolithic Optoelectronic Transistor.

Autor: Aull, B.F., Brown, E.R., Maki, P.A., Mehanian, C., Nichols, K.B., Palmateer, S.C.

Publikováno v: Summer Topical Meeting Digest on Broadband Analog & Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels; 1992, pC65-C66, 2p

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode.

Autor: Mishra, U., Maki, P.A., Wendt, J.R., Schaff, W., Kohn, E., Eastman, L.F.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 02/02/1984, Vol. 20 Issue 3, p145-146, 2p