Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Makhniy V. P."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3-4, Pp 31-35 (2019)
The authors investigate the effect of treating n-ZnSe substrates with boiling aqueous Ca(NO3)2 suspension on their electrical and luminescent properties. Base substrates were cut from bulk pure zinc selenide crystals grown from a stoichiometric melt
Externí odkaz:
https://doaj.org/article/d9f05801107346ba9f4634c616f72e62
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 36-39 (2016)
The authors have experimentally established, that etching of ZnSe:Te substrates in CrO3:HCl=2:1 and H2SO4:H2O2=3:1 solutions leads to formation of mirror and matte surfaces. Analysis of the topogram obtained by an atomic power microscope showed that
Externí odkaz:
https://doaj.org/article/9212c4fd9be14be4ad182ae501ac279d
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 37-40 (2016)
The problem of obtaining of effective edge luminescence with high temperature stability in the zinc selenide crystals is discussed. This task is solved by using as the dopant rare-earth element yttrium, which is introduced into the undoped ZnSe cryst
Externí odkaz:
https://doaj.org/article/4188a5d6d3004b2b939d8ea145b2a4c2
Autor:
Makhniy, V. P.1 (AUTHOR), Vakhnyak, N. D.2 (AUTHOR), Kinzerska, O. V.1 (AUTHOR) oksanakinzerska@gmail.com, Pyryatynsky, Yu. P.3 (AUTHOR)
Publikováno v:
Semiconductors. Mar2019, Vol. 53 Issue 3, p310-312. 3p.
Publikováno v:
Physics and Chemistry of Solid State; Vol 19, No 4 (2018); 313-315
Фізика і хімія твердого тіла; Vol 19, No 4 (2018); 313-315
Фізика і хімія твердого тіла; Vol 19, No 4 (2018); 313-315
Low-temperature annealing of n-CdTe substrates in aqueous suspensions of LiNO3 and Ca(NO3)2 salts created p-conductivity layers. The estimated concentration of free holes in diffusion layers at 300K is (5-50)∙1015 см-3. Keywords: cadmium tellurid
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016, Vol. 19 Issue 4, p391-394. 4p.
Autor:
Makhniy, V. P.1 hello@email.com, Vakhnyak, N. D.2 hello2@email.com, Kinzerska, O. V.1 oksanakinzerska@gmail.com, Senko, I. M.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 1, p80-82. 3p.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009, Vol. 12 Issue 2, p143-146. 4p.
Publikováno v:
Russian Physics Journal. Jul2003, Vol. 46 Issue 7, p736-739. 4p.
Publikováno v:
Acta Physica Polonica: A. 2014, Vol. 126 Issue 5, p1076-1078. 3p.