Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs

Autor: Donmez, Omer, Kara, Kamuran, Erol, Ayse, Akalin, Elif, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal

Publikováno v: In Journal of Alloys and Compounds 25 November 2016 686:976-981

Contactless Investigation of the p-Type Doping Concentration Level of Single Micrometric Size GaAs Crystals Grown on Silicon for Multijunction Solar Cells

Autor: Jaffré, Alexandre, Alvarez, José, Chen, Hung-Ling, Makhloufi, Hajer, RENARD, Charles, Loete, Florent, Collin, Stéphane, Connolly, James Patrick, Kleider, Jean-Paul, Mencaraglia, Denis

Publikováno v: 35th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC)
35th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC), EU PVSEC, Sep 2018, Bruxelles, Belgium. pp.660-664, ⟨10.4229/35thEUPVSEC20182018-2AV.3.17⟩

35th European Photovoltaic Solar Energy Conference and Exhibition; 660-664
In previous work, we have demonstrated the perfect integration on silicon of micrometric GaAs crystals without any structural defects nor stress, using Epitaxal Lateral O

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f17cfc477bb7936931aa2e01affe936e

Multi-junction Solar Cells with Through Substrate Vias Contacts

Autor: Darnon, Maxime, Volatier, Maite, Richard, Olivier, Belin, Jeoffrey, de Lafontaine, Mathieu, Makhloufi, Hajer, jaouad, abdelatif, Ares, Richard, Fafard, Simon, Aimez, Vincent

Publikováno v: Next Generation PhotoVoltaics Canada
Next Generation PhotoVoltaics Canada, May 2015, Toronto, Canada

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ea7780133ef386ee29118962af8505c4
https://hal.archives-ouvertes.fr/hal-02339975

Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers

Autor: Broderick, Christopher, Mazzucato, Simone, Carrère, Hélène, Amand, Thierry, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal, Donmez, Omer, Erol, Ayşe, Usman, Muhammad, O'Reilly, Eoin, Marie, Xavier

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩
Physical Review B : Condensed matter and materials physics
Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 90 (19), 〈10.1103/PhysRevB.90.195301〉
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩

International audience; The electron Landé g factor (g∗) is investigated both experimentally and theoretically in a series of GaBixAs1−x/GaAs strained epitaxial layers, for bismuth compositions up to x=3.8%. We measure g∗ via time-resolved pho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2567c434ee9f42147c473580904881d2
https://hal.laas.fr/hal-02050898v2/document

On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing

Autor: Arnoult, Alexandre, Kuck, Aurélien, Makhloufi, Hajer, Boonpeng, Poonyasiri, Mazzucato, Simone, Zhang, Tiantian, Nicolaï, Julien, Ponchet, Anne, Cristiano, Fuccio, Hungría, Teresa, Lagarde, Delphine, Lacoste, Guy, Carrère, Hélène, Marie, Xavier, Fontaine, Chantal

Publikováno v: 5th international workshop on bismuth−containing semiconductors
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::10b023822312894864b4dcf92958a470
https://hal.laas.fr/hal-01947318