Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Makesh Iyer"'
Publikováno v:
2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON).
Autor:
Makesh Iyer, T. Shanmuganantham
Publikováno v:
Transactions on Electrical and Electronic Materials. 19:365-374
This work deals with the design of low noise amplifiers for WAVE (WLAN for vehicular environment) application which operates in 5.85–5.925 GHz frequency band considering the center frequency as 5.9 GHz. There are various substrates available in the
Autor:
Makesh Iyer, T. Shanmuganantham
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811319051
In this work, low-noise amplifier is designed for IEEE 802.11p WAVE application considering 5.85–5.925 GHz frequency band with a center frequency of 5.9 GHz. The amplifier is designed using GaAs FET ATF-36077 with feedback stabilization technique u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1e0ed72e83f53e64893aec25c9190c1
https://doi.org/10.1007/978-981-13-1906-8_64
https://doi.org/10.1007/978-981-13-1906-8_64
Autor:
T. Shanmuganantham, Makesh Iyer
Publikováno v:
Proceedings of 2nd International Conference on Communication, Computing and Networking ISBN: 9789811312168
This work deals with the designing of low noise amplifier for WiMAX 802.16e application considering 3.4–3.6 GHz frequency band with 3.5 GHz as the center frequency. The amplifier is designed using Pseudomorphic HEMT ATF—34143 of Avago Technologie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf6294b299f4d73c7dd65abdf955e89
https://doi.org/10.1007/978-981-13-1217-5_82
https://doi.org/10.1007/978-981-13-1217-5_82
Autor:
Makesh Iyer, T. Shanmuganantham
This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4991e6a6e69ee894d383c4744832974f
Autor:
Makesh Iyer, T. Shanmuganantham
Publikováno v:
2018 International Conference on Current Trends towards Converging Technologies (ICCTCT).
This work deals with the designing of different low noise amplifiers for 3 cm band application which operates in 10.00 to 10.5 GHz frequency band with 10.40 GHz as the center frequency. The amplifier is designed using GaAs HEMT A–TF 36077 with diff
Autor:
T. Shanmuganantham, Makesh Iyer
Publikováno v:
2018 International Conference on Current Trends towards Converging Technologies (ICCTCT).
This work deals with the designing of low noise amplifier for WiMAX 802.16e application considering 3.4 to 3.6 GHz frequency band with 3.5GHz as the center frequency. The amplifier is designed using GaAs FET MGF – 1303 of Mitsubishi Technologies wi
Autor:
Makesh Iyer, T. Shanmuganantham
Publikováno v:
2017 IEEE International Conference on Circuits and Systems (ICCS).
Amplification is one of the most vital operation in modern RF and microwave communication systems. Earlier microwave amplifiers were made of tubes like klystron, TWT's etc. but due to the development of solid state device technology now-a-days the mi
Autor:
T. Shanmuganantham, Makesh Iyer
Publikováno v:
2017 IEEE International Conference on Circuits and Systems (ICCS).
An important applications of C band microwave frequencies is the Wireless LAN (WLAN) operating at 5 GHz. Since the frequency of operation has increased from 2.45 GHz to 5 GHz the susceptance of noise also increases and hence the selectivity of the re
Publikováno v:
International Journal of Computer Applications. 69:32-37
a-days water scarcity has become a serious problem in India and there are many factors responsible for this like improper supply of water from the dam, improper water saving systems, etc. but one major factor is the improper opening and closing of th