Zobrazeno 1 - 10
of 270
pro vyhledávání: '"Makarovsky O"'
Autor:
Vdovin, E. E., Greenaway, M. T., Khanin, Yu. N., Morozov, S. V., Makarovsky, O., Patanè, A., Mishchenko, A., Slizovskiy, S., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics volume 6, Article number: 159 (2023)
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity
Externí odkaz:
http://arxiv.org/abs/2307.01757
Autor:
Wang, M., Andrews, C., Reimers, S., Amin, O. J., Wadley, P., Campion, R. P., Poole, S. F., Felton, J., Edmonds, K. W., Gallagher, B. L., Rushforth, A. W., Makarovsky, O., Gas, K., Sawicki, M., Kriegner, D., Zubac, J., Olejnik, K., Novak, V., Jungwirth, T., Shahrokhvand, M., Zeitler, U., Dhesi, S. S., Maccherozzi, F.
Publikováno v:
Phys. Rev. B 101, 094429 (2020)
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these ob
Externí odkaz:
http://arxiv.org/abs/1911.12381
Autor:
Greenaway, M. T., Vdovin, E. E., Ghazaryan, D., Misra, A., Mishchenko, A., Cao, Y., Wang, Z., Wallbank, J. R., Holwill, M., Khanin, Yu. N., Morozov, S. V., Watanabe, K., Taniguchi, T., Makarovsky, O., Fromhold, T. M., Patanè, A., Geim, A. K., Fal'ko, V. I., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics 1, 94 (2018)
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant
Externí odkaz:
http://arxiv.org/abs/1810.01312
Autor:
Vdovin, E. E., Mishchenko, A., Greenaway, M. T., Zhu, M. J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S. V., Makarovsky, O., Patanè, A., Slotman, G. J., Katsnelson, M. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Phys. Rev. Lett. 116, 186603 (2016)
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling ass
Externí odkaz:
http://arxiv.org/abs/1512.02143
Autor:
Greenaway, M. T., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J. R., Cao, Y., Kretinin, A. V., Zhu, M. J., Morozov, S. V., Fal'ko, V. I., Novoselov, K. S., Geim, A. K., Fromhold, T. M., Eaves, L.
Publikováno v:
Nature Physics 11, 1057-1062 (2015)
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of suc
Externí odkaz:
http://arxiv.org/abs/1509.06208
Autor:
Mishchenko, A., Tu, J. S., Cao, Y., Gorbachev, R. V., Wallbank, J. R., Greenaway, M. T., Morozov, V. E., Morozov, S. V., Zhu, M. J., Wong, S. L., Withers, F., Woods, C. R., Kim, Y. -J., Watanabe, K., Taniguchi, T., Vdovin, E. E., Makarovsky, O., Fromhold, T. M., Falko, V. I., Geim, A. K., Eaves, L., Novoselov, K. S.
Publikováno v:
Nature Nanotechnology 9, 808-813 (2014)
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the reali
Externí odkaz:
http://arxiv.org/abs/1409.2263
Autor:
Wang, M., Edmonds, K. W., Gallagher, B. L., Rushforth, A. W., Makarovsky, O., Patanè, A., Campion, R. P., Foxon, C. T., Novak, V., Jungwirth, T.
Publikováno v:
Physical Review B 87, 121301 (2013)
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields
Externí odkaz:
http://arxiv.org/abs/1303.2544
Autor:
Edmonds, K. W., Gallagher, B. L., Wang, M., Rushforth, A. W., Makarovsky, O., Patane, A., Campion, R. P., Foxon, C. T., Novak, V., Jungwirth, T.
Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus t
Externí odkaz:
http://arxiv.org/abs/1211.3860
Autor:
Alexeeva, N., Greenaway, M. T., Balanov, A. G., Makarovsky, O., Patanè, A., Gaifullin, M. B., Kusmartsev, F., Fromhold, T. M.
Publikováno v:
Phys. Rev. Lett. 109, 024102 (2012)
We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characte
Externí odkaz:
http://arxiv.org/abs/1207.5166
Autor:
Masek, J., Maca, F., Kudrnovsky, J., Makarovsky, O., Eaves, L., Campion, R. P., Edmonds, K. W., Rushforth, A. W., Foxon, C. T., Gallagher, B. L., Novak, V., Sinova, Jairo, Jungwirth, T.
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of s
Externí odkaz:
http://arxiv.org/abs/1007.4704