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Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Autor: Mak, W. Y., Sfigakis, F., Gupta, K. Das, Klochan, O., Beere, H. E., Farrer, I., Griffiths, J. P., Jones, G. A. C., Hamilton, A. R., Ritchie, D. A.

Publikováno v: Applied Physics Letters 102, 103507 (2013)

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one orde

Externí odkaz: http://arxiv.org/abs/1112.5150

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Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Autor: Gupta, K. Das, Croxall, A. F., Mak, W. Y., Beere, H. E., Nicoll, C. A., Farrer, I., Sfigakis, F., Ritchie, D. A.

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A

Externí odkaz: http://arxiv.org/abs/1111.4310

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Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

Autor: Mak, W. Y., Gupta, K. Das, Beere, H. E., Farrer, I., Sfigakis, F., Ritchie, D. A.

Publikováno v: Applied Physics Letters 97, 242107 (2010)

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a funct

Externí odkaz: http://arxiv.org/abs/1007.1019

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