Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Maik Liebau"'
Autor:
Eugen Unger, Paolo Lugli, Franz Kreupl, Georg S. Duesberg, Henning Riechert, A. P. Graham, Maik Liebau, Walter M. Weber, Werner Pamler, Lutz Geelhaar, Caroline Chèze
Publikováno v:
Nano Letters. 6:2660-2666
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b7186828d309b880b48d39fe9be0a2
https://doi.org/10.1021/nl0613858
https://doi.org/10.1021/nl0613858
Autor:
Andrew Graham, Eugen Unger, Franz Kreupl, Werner Pamler, Maik Liebau, Robert Seidel, Wolfgang Hoenlein, Georg S. Duesberg
Publikováno v:
Microelectronic Engineering. 83:619-623
The further scaling of silicon devices will hit some roadblocks in the future that may not be overcome by standard technology. The introduction of new materials into silicon technology may help for a while, but integration issues have to be solved in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161068a1d1ea47557de1525acfeba665
https://doi.org/10.1016/j.mee.2005.12.018
https://doi.org/10.1016/j.mee.2005.12.018
Publikováno v:
Fullerenes, Nanotubes and Carbon Nanostructures. 13:255-258
The semiconductor industry is expecting extraordinary technological challenges, so the readiness to integrate exotic materials with superior properties into microelectronic chips is increasing and new concepts are attracting more interest. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27583894e14b7fb0102f9ef086ea3a7a
https://doi.org/10.1081/fst-200039292
https://doi.org/10.1081/fst-200039292
Autor:
Andrew Graham, R. Martin, Werner Pamler, Franz Kreupl, Wolfgang Hoenlein, B. Rajasekharan, Georg S. Duesberg, Werner Steinhoegl, Eugen Unger, Robert Seidel, Maik Liebau
Publikováno v:
Applied Physics A. 80:1141-1151
This paper presents an overview of the issues related to the integration of carbon nanotubes into microelectronics systems. Particular emphasis is placed on the use of carbon nanotubes as on-chip wiring (interconnects) and active devices (transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e976700203584ea3c421bc02d9dcbf
https://doi.org/10.1007/s00339-004-3151-7
https://doi.org/10.1007/s00339-004-3151-7
Autor:
Andrew Graham, Franz Kreupl, Wolfgang Hoenlein, Georg S. Duesberg, Robert Seidel, Maik Liebau, Eugen Unger
Publikováno v:
Chemical Physics Letters. 399:280-283
The reaction of multi-walled carbon nanotubes (MWCNT) with xenon difluoride has been studied and compared with the results from experiments with elemental fluorine. A low level fluorination of MWCNTs was achieved at ambient temperature under the infl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624cd597e33a9bd8512b3d86223a46b8
https://doi.org/10.1016/j.cplett.2004.10.021
https://doi.org/10.1016/j.cplett.2004.10.021
Autor:
Werner Steinhoegl, Robert Seidel, Wolfgang Hoenlein, Maik Liebau, Georg S. Duesberg, Wolfgang Pompe, Eugen Unger, Andrew Graham, Franz Kreupl
Publikováno v:
Nano Letters. 4:831-834
Planar field effect transistors (FET) consisting of a large number of parallel single-walled carbon nanotubes (SWCNT) have been fabricated that allow very high on-currents of the order of several milliamperes and on/off ratios exceeding 500. With the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f9ca17cfe7366bc4a74258be09ea39
https://doi.org/10.1021/nl049776e
https://doi.org/10.1021/nl049776e
Autor:
Robert Seidel, Eugen Unger, Maik Liebau, Andrew Graham, Franz Kreupl, Wolfgang Hoenlein, Georg S. Duesberg
Publikováno v:
Diamond and Related Materials. 13:354-361
The outstanding performance of carbon nanotubes (CNTs) as interconnects and microelectronic devices has been shown in a number of experiments on hand-picked demonstrators. However, for implementation parallel manufacture, which involves the precise p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0cafb3f94a1727cd1620c82cf95805
https://doi.org/10.1016/j.diamond.2003.10.021
https://doi.org/10.1016/j.diamond.2003.10.021
Publikováno v:
The Journal of Physical Chemistry B. 108:1888-1893
A comparison of different catalysts (Ni, Co, Fe/Mo) has been performed in order to minimize the growth temperature for single-walled carbon nanotubes (SWCNTs). Dense SWCNT networks have been synthesized by thermal chemical vapor deposition (CVD) at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279f8fda4f352c1d89e464568adf238c
https://doi.org/10.1021/jp037063z
https://doi.org/10.1021/jp037063z
Autor:
Maik Liebau, Wolfgang Hoenlein, Georg S. Duesberg, Eugen Unger, Robert Seidel, Franz Kreupl, Andrew Graham
Publikováno v:
Materials Science and Engineering: C. 23:663-669
As the semiconductor industry faces increasing technological and financial challenges, new concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in micro- and nanoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c264ef50e97ef71dd59d4ff82e2200c9
https://doi.org/10.1016/j.msec.2003.09.153
https://doi.org/10.1016/j.msec.2003.09.153
Autor:
Maik Liebau, Wolfgang Hoenlein, Franz Kreupl, Georg S. Duesberg, Andrew Graham, Robert Seidel, Eugen Unger
Publikováno v:
Applied Physics A: Materials Science & Processing. 77:731-734
Individual multi-walled carbon nanotubes (CNTs) were deposited onto microelectrodes and embedded in nickel to achieve low-ohmic contact resistances. Electroless deposition of nickel onto gold/iron, palladium, and cobalt microelectrodes was used to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd7576f20b61ebeb32467cc9bb0d7b2
https://doi.org/10.1007/s00339-003-2207-4
https://doi.org/10.1007/s00339-003-2207-4