Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Mahmut Sami Kavrik"'
Autor:
Kevin P. O’Brien, Carl H. Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, Ande Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut Sami Kavrik, Rachel Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan Tronic, Scott Clendenning, Paul Fischer, Ernisse S. Putna, Marko Radosavljevic, Matt Metz, Uygar Avci
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-5 (2023)
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent
Externí odkaz:
https://doaj.org/article/f96e8d19735141ee83b9271a47ca8847
Autor:
Wonhee Ko, Eyup Bedirhan Unlu, Mahmut Sami Kavrik, Matt Law, An-Ping Li, Alex Abelson, Juan Carlos Idrobo, Caroline Qian, Harshil Kashyap, Jordan A. Hachtel
Publikováno v:
Nature Communications. 13
Quantum coupling in arrayed nanostructures may induce novel mesoscale properties such as electronic minibands that may lead to applications including high efficiency solar cells. Colloidal PbSe quantum dots (QDs) can self-assemble into epitaxially-fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64f5881d57353a20d9618aaafef8b49d
https://doi.org/10.1038/s41467-022-33955-w
https://doi.org/10.1038/s41467-022-33955-w
Autor:
Peter Ercius, Paul C. McIntyre, Moon J. Kim, Yuan Taur, Andrew C. Kummel, Qingxiao Wang, Joanna Cheung, Mahmut Sami Kavrik, Kechao Tang, Bernd Fruhberger
Publikováno v:
ACS Applied Materials & Interfaces. 11:15111-15121
Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f236f926950d3dac64be10370865798
https://doi.org/10.1021/acsami.8b22362
https://doi.org/10.1021/acsami.8b22362
Autor:
Sean Kang, Jun Hong Park, Keith Tatseun Wong, Larry Grissom, Andrew C. Kummel, Bernd Fruhberger, Mahmut Sami Kavrik, Iljo Kwak
Publikováno v:
Applied Surface Science. 463:758-766
Al2O3 and Al2O3/HfO2 bilayer gate stacks were directly deposited on the surface of 2D materials via low temperature ALD/CVD of Al2O3 and high temperature ALD of HfO2 without any surface functionalization. The process is self-nucleating even on inert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9132e0e0b3cec3269a592c75aebdf84
https://doi.org/10.1016/j.apsusc.2018.08.034
https://doi.org/10.1016/j.apsusc.2018.08.034
Autor:
Jun Hong Park, Jeffrey J. Spiegelman, Iljo Kwak, Steven Wolf, Andrew C. Kummel, Michael Breeden, Daniel Alvarez, Mehul Naik, Mahmut Sami Kavrik
Publikováno v:
Applied Surface Science. 462:1029-1035
Thermal ALD of TaNx and TiNx films was performed using hydrazine (N2H4) as a reactive N-containing source. Ultralow temperature (100 °C and 300 °C) growth of TaNx was observed using N2H4 and tris(diethylamido)(tert-butylimido) tantalum (TBTDET); XP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a7025f9dfd4da901f67541f9922f2c
https://doi.org/10.1016/j.apsusc.2018.07.153
https://doi.org/10.1016/j.apsusc.2018.07.153
Autor:
Paul C. McIntyre, Kechao Tang, Eli Rotenberg, Andrew C. Kummel, Emily Thomson, Toshihiro Aoki, Bernd Fruhberger, Mahmut Sami Kavrik, Aaron Bostwick, Yuan Taur
Publikováno v:
Journal of the American Chemical Society, vol 142, iss 1
Silicon germanium (SiGe) is a multifunctional material considered for quantum computing, neuromorphic devices, and CMOS transistors. However, implementation of SiGe in nanoscale electronic devices necessitates suppression of surface states dominating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53d722a92b484029695e6d94900e9f97
https://escholarship.org/uc/item/3g0754cc
https://escholarship.org/uc/item/3g0754cc
Autor:
Paul C. McIntyre, Scott T. Ueda, Emily Thomson, Mahmut Sami Kavrik, Toshihiro Aoki, Moon J. Kim, Vincent D.-H. Hou, Evgueni Chagarov, Andrew C. Kummel, Yuan Taur, Bernd Fruhberger, Kechao Tang
Publikováno v:
ACS Applied Materials & Interfaces. 10:30794-30802
The superior carrier mobility of SiGe alloys make them a highly desirable channel material in complementary metal-oxide-semiconductor (CMOS) transistors. Passivation of the SiGe surface and the associated minimization of interface defects between SiG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a54ef1261fc8793bb5aceff03d09f7
https://doi.org/10.1021/acsami.8b06547
https://doi.org/10.1021/acsami.8b06547
Publikováno v:
Applied Surface Science. 443:644-654
Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3bc2badfc1c9fb4494c8887feca541
https://doi.org/10.1016/j.apsusc.2018.02.041
https://doi.org/10.1016/j.apsusc.2018.02.041
Autor:
Mohammad Abu Raihan Miah, Lujiang Yan, Yugang Yu, Yu-Hsin Liu, Alex Ce Zhang, David J. Hall, Yu-Hwa Lo, Mahmut Sami Kavrik, Ifikhar Ahmad Niaz
Publikováno v:
SPIE Proceedings.
An intrinsic signal amplification mechanism, namely cycling excitation process (CEP), has been demonstrated in a heavily doped and heavily compensated silicon p-n junction diode. The physical process amplifies photo-generated signal at low bias (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaee43ced6958fdb22cfdde40ffe756
https://doi.org/10.1117/12.2238585
https://doi.org/10.1117/12.2238585
Autor:
Lujiang Yan, David J. Hall, Yu-Hwa Lo, Iftikhar Ahmad Niaz, Mahmut Sami Kavrik, Yu-Hsin Liu, Alex Ce Zhang
Publikováno v:
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Optical imaging and detection systems use photodetectors to turn optical signals into electric signals and use electronic amplifiers to increase the signal intensity. If the detector can produces sufficient gain by itself, the sensitivity can no long
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04faa5cf87993ada871d6b368728f6d
https://doi.org/10.1109/phosst.2016.7548538
https://doi.org/10.1109/phosst.2016.7548538