Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mahmut Kavrik"'
Autor:
Steven Wolf, Michael Breeden, Mahmut Kavrik, Jun Hong Park, Daniel Alvarez, Russell Holmes, Jeff Spiegelman, Andrew C Kummel
Publikováno v:
ECS Meeting Abstracts. :765-765
Titanium nitride (TiN) has been extensively studied in semiconductor devices because of its ideal thermal, mechanical, and electrical properties, along with its ability to act as a diffusion barrier to WF6 during W metal fill. Similarly, tantalum nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef98c41382023ae637579c7101175e0
https://doi.org/10.1149/ma2018-02/19/765
https://doi.org/10.1149/ma2018-02/19/765
Autor:
Iljo Kwak, Mahmut Kavrik, Emily Thomson, Yu-Chia Liang, Scott T Ueda, Kechao Tang, Vincent Hou, Chung-Yang Lee, Toshihiro Aoki, Moon Kim, Bernd Fruhberger, Yuan Taur, Paul C. McIntyre, Andrew C Kummel
Publikováno v:
ECS Meeting Abstracts. :1080-1080
Silicon germanium (SiGe) channels for CMOS are favorable due to high intrinsic carrier mobility and band gap tunability[1] To utilize the superior properties of SiGe, low interface defect density (Dit) must be obtained at the SiGe-high k interface. G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2332bacb8e3096e25b1a4f5cd9f25ab
https://doi.org/10.1149/ma2018-02/31/1080
https://doi.org/10.1149/ma2018-02/31/1080
Autor:
Evgueni Chagarov, Mahmut Kavrik, Michael Katz, Norman Stanford, Albert Davydov, Min-Hung Lee, Andrew C Kummel
Publikováno v:
ECS Meeting Abstracts. :694-694
The mechanism of stability of the phases of HfO2, ZrO2, and HZO (HfxZr1-xO2) were systematically investigated with density functional theory molecular dynamics (DFT-MD) to determine the mechanism for HZO having a much larger process window for format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee74b2eed70345f5b32c291f0dfb1c1
https://doi.org/10.1149/ma2018-02/16/694
https://doi.org/10.1149/ma2018-02/16/694