Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mahesh Pandikunta"'
Publikováno v:
physica status solidi c. 11:487-490
Crack-free high quality N-polar AlN epitaxial layers were grown on Si (111) substrates by plasma-assisted molecular beam epitaxy in the temperature range of 780–880 °C. The streaky 1×3 reflection high energy electron diffraction pattern was obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d827e8ad4e8f94bb7b86d6c57c920e1
https://doi.org/10.1002/pssc.201300428
https://doi.org/10.1002/pssc.201300428
Autor:
Mark Holtz, Denis Myasishchev, Sandeep Sohal, Georgiy M. Guryanov, Rakib Uddin, Vladimir Kuryatkov, Sergey A. Nikishin, Vladimir Mansurov, Mahesh Pandikunta
Publikováno v:
Journal of Electronic Materials. 41:824-829
In x Al1−x N alloys with low indium content (0.025
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6663d728cbe5a0fecf713c9da2f2042b
https://doi.org/10.1007/s11664-012-1967-z
https://doi.org/10.1007/s11664-012-1967-z
Autor:
Mahesh Pandikunta, Zhaoyang Fan, Sergey A. Nikishin, Mark Holtz, Vladimir Kuryatkov, Yahya Alivov, Xuan Pan
Publikováno v:
MRS Proceedings. 1211
Transformation of titanium dioxide (TiO2) nanotubes (NTs) to truncated bipyramidal shape nanoparticles (NPs) with a large fraction of photo-catalytically active {001} facet surface was observed after thermal annealing TiO2 ordered nanotube arrays in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93130d3cca7c14a141fdc5671ec20a2d
https://doi.org/10.1557/proc-1211-r08-33
https://doi.org/10.1557/proc-1211-r08-33
Autor:
D. Rosenbladt, W. Feng, B. Borisov, Vladimir Kuryatkov, Mahesh Pandikunta, Sergey A. Nikishin, Mark Holtz
Publikováno v:
MRS Proceedings. 1202
High crystal quality crack-free AlN on sapphire was grown by low pressure metal organic vapor phase epitaxy (MOVPE). Growth experiments combine two recent approaches: the ammonia pulse-flow method and ammonia continuous-flow growth mode by varying th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e873eddef9b95e04a8183b45e54aa44f
https://doi.org/10.1557/proc-1202-i05-04
https://doi.org/10.1557/proc-1202-i05-04
Autor:
D. Rosenbladt, Mark Holtz, W. Feng, Mahesh Pandikunta, Nenad Stojanovic, Vladimir Kuryatkov, Sergey A. Nikishin
Publikováno v:
MRS Proceedings. 1202
We report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd57ba4718504b49416cb465d9458f4d
https://doi.org/10.1557/proc-1202-i01-04
https://doi.org/10.1557/proc-1202-i01-04
Autor:
Yuriy Kudriavtsev, Sergey Yu. Karpov, Vladimir Mansurov, I. Chary, Mahesh Pandikunta, B. Borisov, Rene Asomoza, Sergey A. Nikishin, Mark Holtz, Ayrton Bernussi, Sandeep Sohal, K. A. Bulashevich, Gautam Rajanna
Publikováno v:
Scopus-Elsevier
The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3d042f05adf3709520d3919cbae81eb
https://doi.org/10.1557/proc-1202-i10-03
https://doi.org/10.1557/proc-1202-i10-03
Autor:
Mahesh Pandikunta, Sergey A. Nikishin, Ayrton Bernussi, Vladimir Kuryatkov, Zhaoyang Fan, Gautam Rajanna, D. Johnstone, Yahya Alivov
Publikováno v:
MRS Proceedings. 1178
In this work we investigated the structural, electrical, and optical properties of titanium dioxide (TiO2) nanotubes (NTs) formed by electrochemical anodization of Ti metal sheets in NH4F+glycerol electrolyte at different anodization voltages (Va) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea634c6be2b9dc2e668867f09422f175
https://doi.org/10.1557/proc-1178-aa09-27
https://doi.org/10.1557/proc-1178-aa09-27
Autor:
Mark Holtz, Sergey A. Nikishin, Vladimir Kuryatkov, B. Borisov, Xiaoyan Xu, Mahesh Pandikunta
Publikováno v:
MRS Proceedings. 1108
The effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c7c5ee7bc5f81e413e10df7ecc8541
https://doi.org/10.1557/proc-1108-a09-34
https://doi.org/10.1557/proc-1108-a09-34
Autor:
R. E. Balderas-Navarro, Oleg Ledyaev, L. F. Lastras-Martínez, Vladimir Kuryatkov, Sergey A. Nikishin, A. Lastras-Martínez, Mahesh Pandikunta, N. A. Ulloa-Castillo, R. Herrera-Jasso
Publikováno v:
Japanese Journal of Applied Physics. 54:021501
Si3N4 has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si3N4 thin films are fundamental parameters that must be determined for different applications. In order t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bf88017302a0040e95c825284daea9
https://doi.org/10.7567/jjap.54.021501
https://doi.org/10.7567/jjap.54.021501
Publikováno v:
Japanese Journal of Applied Physics. 53:050306
The influence of RF power on the growth of N-polar AlN thin layers on Si(111) by plasma-assisted molecular beam epitaxy was systematically studied. The surface reconstruction of AlN was 1 × 1 for samples grown at RF power of 350–450 W, while sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ab89694a0f08e7f5b5c4a1d04d079a
https://doi.org/10.7567/jjap.53.050306
https://doi.org/10.7567/jjap.53.050306