Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mahesh Gokhale"'
Autor:
Richard Pinto, A. Jayarama, Siddhartha P. Duttagupta, Preetam Castelino, Peter Fernandes, Shriganesh S. Prabhu, Karthik Suresh, A.P. Shah, Mahesh Gokhale
Publikováno v:
Materials Today: Proceedings. 35:412-416
Hydrogen fuel cells have been designed and fabricated with an aim to investigate effect of cell clamping pressure and hydrogen flowrates on the performance of fuel cells. Fuel cells with active area 1.9 cm × 1.6 cm were fabricated with aluminum anod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68db39235890d6cbc9f96caf0d35e716
https://doi.org/10.1016/j.matpr.2020.02.791
https://doi.org/10.1016/j.matpr.2020.02.791
Publikováno v:
Journal of Physics: Condensed Matter. 33:295402
In this paper, we study the structure of the solid selenium (Se) formed by the vapor deposition method. We provide direct visual evidence that faceted crystal-like shapes obtained from vapor phase deposition are a self-assembly of linear strands that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::421c88eb0bb62001795ddab0d03637d9
https://doi.org/10.1088/1361-648x/ac0025
https://doi.org/10.1088/1361-648x/ac0025
Autor:
Arumugam Thamizhavel, Rajib Mondal, Arnab Bhattacharya, Mahesh Gokhale, Ruta Kulkarni, A. Azizur Rahman, Emroj Hossain
Publikováno v:
Journal of Crystal Growth. 524:125165
We report a comprehensive study of the growth of GaN layers on (1 0 0)-oriented Ga2O3 substrates by metalorganic vapour phase epitaxy (MOVPE), especially the improvement on using an intermediate facet-control layer between the low-temperature buffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa480f669468caae204bd65597467726
https://doi.org/10.1016/j.jcrysgro.2019.125165
https://doi.org/10.1016/j.jcrysgro.2019.125165
Autor:
Sandip Ghosh, Bhagyashree A. Chalke, Arnab Bhattacharya, Rudheer D. Bapat, Jayesh B. Parmar, Mahesh Gokhale, Carina B. Maliakkal
Publikováno v:
Nanotechnology. 30:254002
Bulk gallium phosphide (GaP) crystallizes in the zinc-blende (ZB) structure and has an indirect bandgap. However, GaP nanowires (NWs) can be synthesized in the wurtzite (WZ) phase as well. The contradictory theoretical predictions and experimental re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::281eb0538bf65d127c4bb1fbfee8fb97
https://doi.org/10.1088/1361-6528/ab0a46
https://doi.org/10.1088/1361-6528/ab0a46
Autor:
Arindam Chowdhury, Arnab Bhattacharya, Arunasish Layek, Abdul Kadir, Mahesh Gokhale, Subhabrata Dhar, Suman De, Archana Raja
Publikováno v:
Advanced Functional Materials. 21:3828-3835
The high light-output efficiencies of In(x)Ga(1-x)N quantum-well (QW)-based light-emitting diodes (LEDs) even in presence of a large number of non-radiative recombination centers (such as dislocations) has been explained by localization of carriers i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e10a7827117a7b115eecacf64d402def
https://doi.org/10.1002/adfm.201100894
https://doi.org/10.1002/adfm.201100894
Autor:
Abdul Kadir, Arnab Bhattacharya, Brij M. Arora, Ravi Kumar, A.P. Shah, Mahesh Gokhale, Tapas Ganguli
Publikováno v:
Journal of Crystal Growth. 310:4942-4946
The microstructure of epitaxial InN layers has been analyzed by high-resolution X-ray diffraction. Various mosaic block parameters like the tilt and twist between the blocks and an estimate of their lateral coherence lengths have been obtained for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4a278ced830febbcadee55d5b2cf4a
https://doi.org/10.1016/j.jcrysgro.2008.08.007
https://doi.org/10.1016/j.jcrysgro.2008.08.007
Autor:
Ashish Arora, A.P. Shah, Mahesh Gokhale, Arnab Bhattacharya, A. Azizur Rahman, Masihhur R. Laskar
Publikováno v:
IEEE Photonic Society 24th Annual Meeting.
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed by polarization-resolved transmission and photocurrent measurements,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29bc9be51bf94e7e45df5b02b5bb29d5
https://doi.org/10.1109/pho.2011.6110413
https://doi.org/10.1109/pho.2011.6110413
Autor:
Arnab Bhattacharya, Mandar M. Deshmukh, R. Arvind Pawan, Sajal Dhara, Vibhor Singh, Hari S. Solanki, Shamashis Sengupta, Abhishek Dhar, Mahesh Gokhale, Bhagyashree A. Chalke
We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $\kappa$ arises from the strong loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1c3bf1297fdddddedfcefca167e22e5
http://arxiv.org/abs/1106.2880
http://arxiv.org/abs/1106.2880
Autor:
A. S. Vengurlekar, Amey Deshpande, Alok U. Chaubal, Sajal Dhara, Mahesh Gokhale, S. S. Prabhu, Arnab Bhattacharya
Publikováno v:
35th International Conference on Infrared, Millimeter, and Terahertz Waves.
We study the emission mechanisms of THz radiation from InAs nanowires (NWs) using femtosecond infrared (IR) pump beam and THz probe in a time-resolved reflection geometry setup at room temperature. We compare the spectra of InAs NWs with that of a p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10dca3033b860f4c4892557f228fe482
https://doi.org/10.1109/icimw.2010.5613054
https://doi.org/10.1109/icimw.2010.5613054
Autor:
S. S. Prabhu, Arnab Bhattacharya, Sajal Dhara, A. S. Vengurlekar, Amey Deshpande, Mahesh Gokhale, Alok U. Chaubal
Publikováno v:
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.
We present our investigation of the THz radiation emission from InAs nanowires (NW) grown on a GaAs substrate. We also compare the emitted power of the radiation from InAs nanowires with a p-InAs crystal, a standard THz emitter. The absolute emitted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071f03e47914f2d2842b6cfe04ee3649
https://doi.org/10.1109/icimw.2009.5324622
https://doi.org/10.1109/icimw.2009.5324622