Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Mahendra Pakala"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:3990-3996
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc763b90db9ce8b8c7d86a55d60ea182
https://doi.org/10.1109/ted.2022.3172244
https://doi.org/10.1109/ted.2022.3172244
Publikováno v:
IEEE Transactions on Electron Devices. 67:4152-4157
The threshold voltage variability of the select transistors is an important issue in the development of 3-D NAND flash memory. Particularly, pillar-to-pillar variations in threshold voltage ( ${V}_{\text {T}}$ ) of the ground select transistor (GST)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e147b1666a28a3984517d249974743c3
https://doi.org/10.1109/ted.2020.3012927
https://doi.org/10.1109/ted.2020.3012927
Publikováno v:
IEEE Transactions on Electron Devices. 67:1902-1905
In this article, a novel technique using the work-function (WF) engineering of passing word line (PWL) has been proposed to mitigate zero-failure in Saddle-Fin-Recessed-Channel-Access-Transistor (S-RCAT). The zero-failure caused by the hammered acces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba22f5164246024615971ffd95c928ad
https://doi.org/10.1109/ted.2020.2975758
https://doi.org/10.1109/ted.2020.2975758
Publikováno v:
IEEE Transactions on Electron Devices. 67:929-936
The channel tapering from top to bottom in vertical channel 3-D NAND is a major concern. This leads to nonuniformity in the NAND string performance, including cell current ( ${I}_{\text {cell}}$ ) and threshold voltage ( ${V}_{\text {T}}$ ) variation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb33a7aa1b6051313ec0b95ff6910da1
https://doi.org/10.1109/ted.2020.2967869
https://doi.org/10.1109/ted.2020.2967869
Publikováno v:
IEEE Transactions on Electron Devices. 66:4170-4175
In this article, we investigate a novel technique to minimize row hammer (RH) fail in the saddle fin recessed channel access transistor (S-RCAT) at 1X dynamic random access memory node. We propose a selective introduction of a low work function (WF)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0dc0724f57952619823e5758707d92
https://doi.org/10.1109/ted.2019.2931347
https://doi.org/10.1109/ted.2019.2931347
Autor:
W. G. Kim, Daniele Garbin, D. Cellier, Robin Degraeve, Sergiu Clima, S. Kabuyanagi, Mahendra Pakala, A. Cockburn, G. L. Donadio, Andrea Fantini, Wouter Devulder, Gouri Sankar Kar, M. Suzuki, Ludovic Goux, Romain Delhougne
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Switching mechanism and its controllability in Ovonic Threshold Switching (OTS) devices are systematically investigated by using Si-Ge-As-Se quaternary system known as promising OTS materials. We newly demonstrate that selector device performance is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cdcb8bfe4858a488ad7b70590df0dee
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1030
With the gate-length scaling, the number of domains in FeFET is reduced to a few or a single domain. In this paper, we investigate the effect of multi-domains versus few/single-domain behavior in FeFET. The abrupt polarization switching behavior of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78000946792e761f00cbaa56bdc1d0f2
https://doi.org/10.35848/1347-4065/ac428a
https://doi.org/10.35848/1347-4065/ac428a
Autor:
Wouter Devulder, Romain Delhougne, W. G. Kim, Andrea Fantini, Gouri Sankar Kar, Sergiu Clima, Christophe Detavernier, A. Cockburn, Mahendra Pakala, Robin Degraeve, Ludovic Goux, Karl Opsomer, G. L. Donadio, D. Cellier, Daniele Garbin
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310b449b2b421dd6dc7c2ce077a73ade
https://doi.org/10.1109/iedm19573.2019.8993547
https://doi.org/10.1109/iedm19573.2019.8993547
Publikováno v:
IEEE Transactions on Electron Devices. 64:3639-3646
Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-access memory are by far the only known solid-state memory element that can realize a combination of fast read/write speed and high endurance. This paper presents a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4247d72f2c529b3b07426d2ca824b0a9
https://doi.org/10.1109/ted.2017.2731959
https://doi.org/10.1109/ted.2017.2731959
Autor:
C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
This paper investigates the temperature-dependent behaviors of critical device parameters in 1 Gb perpendicular magnetic tunnel junction (pMTJ) arrays from 25 °C to 125 °C. Despite the fact that pMTJ (45-50 nm in diameter) attributes are generally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc964a83a7b17a83fff74f84aa1f586
https://doi.org/10.1109/tmag.2016.2615816
https://doi.org/10.1109/tmag.2016.2615816