Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mahdi Khoshbaten"'
Publikováno v:
Journal of Computational Electronics. 20:70-80
Two new vertical resonant tunneling devices (RTDs) of different sizes are proposed herein to achieve negative differential resistance with enhanced tunneling and peak-to-valley ratio (PVR) stability. The proposed structures are of the form n+–p−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0a64576e917484b361e2cc559f1e29
https://doi.org/10.1007/s10825-020-01542-1
https://doi.org/10.1007/s10825-020-01542-1
Publikováno v:
IEEE Transactions on Electron Devices. 66:3675-3682
This paper proposes a robust to defects and short length device (RDSLD), a newly in-plane resonant tunneling diode (RTD), and its ac-modeling with the minimum length of 3 nm. The proposed structure has robust performance in the presence of defects. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522f7b94d95ed7ae525def5b881dfe39
https://doi.org/10.1109/ted.2019.2924451
https://doi.org/10.1109/ted.2019.2924451
Publikováno v:
2019 27th Iranian Conference on Electrical Engineering (ICEE).
Resonant tunneling diodes (RTDs), due to their large dimension in conventional semiconductors, require a serious reduction in it while maintaining their electronic properties. Although the use of 2D materials has been able to reduce the size of the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319581ae646e83eb28cb4fcb42562412
https://doi.org/10.1109/iraniancee.2019.8786582
https://doi.org/10.1109/iraniancee.2019.8786582