Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mahdi Gholizadeh"'
Publikováno v:
بهداشت در عرصه, Vol 12, Iss 1 (2024)
زمینه و اهداف: بررسی وضعیت باقیمانده آفتکشها در محصولات کشاورزی امری مهم در راستای تضمین سلامت جامعه میباشد. مطالعه حاضر با هدف
Externí odkaz:
https://doaj.org/article/2c8301aeba204e4095febf10e1e568d2
Publikováno v:
آیندهپژوهی دفاعی, Vol 3, Iss 8, Pp 107-140 (2018)
Establishing extensive sanctions against the Islamic Republic of Iran has put financial institutions and banks affiliated with the armed forces with serious challenges as one of the main pillars of the banking system and economic development of the c
Externí odkaz:
https://doaj.org/article/ea47c771427f4315980ac330e1f34ddf
Publikováno v:
Superlattices and Microstructures. 152:106836
This paper presents an explicit capacitance model with closed-form expressions for double gate tunnel FETs (DG-TFETs). The model is based on a 2-D potential approach, considering the mobile charges in the solution. This model uses a quasi-static appr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d693142963241d7c39c90b51b79cbcbd
https://doi.org/10.1016/j.spmi.2021.106836
https://doi.org/10.1016/j.spmi.2021.106836
Autor:
Mahdi Gholizadeh
Publikováno v:
Journal of Physical Fitness, Medicine & Treatment in Sports. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e159fb33995e11937b21215be3a9d0a8
https://doi.org/10.19080/jpfmts.2018.04.555639
https://doi.org/10.19080/jpfmts.2018.04.555639
Publikováno v:
IEEE Transactions on Electron Devices. 61:1494-1500
This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2-D Poisson's equation. From the potential profile, the electric field is derived and then the drain current expression is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4efc5fd7e6920f0662c32cb19322c309
https://doi.org/10.1109/ted.2014.2313037
https://doi.org/10.1109/ted.2014.2313037
An analytical model for transfer characteristics and sub-threshold swings in double-gate tunnel FETs
Publikováno v:
2014 22nd Iranian Conference on Electrical Engineering (ICEE).
An analytical model for double-gate (DG) tunnel FETs (TFETs) using two-dimensional (2-D) solution of Poisson's equation is presented. We derived analytical expressions for the drain current and sub-threshold swing from the maximum electric field usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c975a64b5e6be7ef5ee0edf9c82c299
https://doi.org/10.1109/iraniancee.2014.6999501
https://doi.org/10.1109/iraniancee.2014.6999501