Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Mahaveer K. Jain"'
Autor:
Guruprasad Sahoo, Mahaveer K. Jain
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107223-107223-6 (2015)
We have investigated the temperature dependent carrier transport properties of nano-crystalline copper nitride thin films synthesized by modified activated reactive evaporation. The films, prepared in a Cu-rich growth condition are found to be highly
Externí odkaz:
https://doaj.org/article/9a55b269de874fc28228e32e03d8da42
Autor:
Dhanya S. Murali, Shailendra Kumar, R. J. Choudhary, Avinash D. Wadikar, Mahaveer K. Jain, A. Subrahmanyam
Publikováno v:
AIP Advances, Vol 5, Iss 4, Pp 047143-047143-5 (2015)
Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour) of magnetron sputtered (at 300 K) CuO thin films. The Cu2O thin films are p-type and show enhanc
Externí odkaz:
https://doaj.org/article/a1782cfb7d8a44538e2e82fde7da3482
Autor:
Keat G. Ong, Maggie Paulose, William R. Dreschel, Mahaveer K. Jain, Kefeng Zeng, Casey S. Mungle, Craig A. Grimes
Publikováno v:
Sensors, Vol 2, Iss 7, Pp 294-313 (2002)
This paper presents a comprehensive review of magnetoelastic environmental sensor technology; topics include operating physics, sensor design, and illustrative applications. Magnetoelastic sensors are made of amorphous metallic glass ribbons or wires
Externí odkaz:
https://doaj.org/article/dcb964c16fff469a93281dae0b1c4608
Publikováno v:
Materials Science and Engineering: B. 191:7-14
Highly crystalline copper nitride (Cu3N) thin films have been deposited on glass substrates at room temperature by a novel and commercially viable growth technique, known as modified activated reactive evaporation (MARE). The effects of change in rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7edd377d68215ce00a0b1f38214b8fb8
https://doi.org/10.1016/j.mseb.2014.10.002
https://doi.org/10.1016/j.mseb.2014.10.002
Publikováno v:
Journal of Materials Science. 48:1196-1204
In this report, we have studied the compositional dependence of structural, optical and electrical properties of polycrystalline In x Ga1−x N thin films grown by modified activated reactive evaporation. The growth was monitored by optical emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef36efaf88da0e6f935cad25a88612b9
https://doi.org/10.1007/s10853-012-6859-3
https://doi.org/10.1007/s10853-012-6859-3
Autor:
R. V. Muniswami Naidu, S. V. N. Bhaskara Rao, Arnaud Verger, D. M. Phase, Aryasomayajula Subrahmanyam, Shambhu Nath Jha, Mahaveer K. Jain
Publikováno v:
Electronic Materials Letters. 8:457-462
We report on the charge carrier transport mechanisms of undoped and Ga doped (2 wt. % and 4 wt. %) ZnO thin films grown by pulsed dc magnetron sputtering technique. Temperature dependent resistivity measurements showed typical semiconducting behaviou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b64ffb48e81e79defb0c01e3512a39a
https://doi.org/10.1007/s13391-012-1086-2
https://doi.org/10.1007/s13391-012-1086-2
Publikováno v:
Applied Surface Science. 258:1744-1749
In the present work, InxGa1 - xN films with different indium compositions (x = 0.88, 0.63, 0.36 and 0.18) were prepared on glass substrates using a commercially viable technique known as modified activated reactive evaporation. Electrochemical impeda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19117667867d99113571543c440b3e5e
https://doi.org/10.1016/j.apsusc.2011.10.032
https://doi.org/10.1016/j.apsusc.2011.10.032
Publikováno v:
Powder Diffraction. 26:248-255
Polycrystalline AgIn3Te5 synthesized by melt-quench technique has been analyzed using proton induced X-ray emission (PIXE), X-ray diffraction (XRD), and selected area electron diffraction. PIXE analysis yielded the content of Ag, In, and Te, respecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78629695845a2ba8768f0130cf50a106
https://doi.org/10.1154/1.3624887
https://doi.org/10.1154/1.3624887
Publikováno v:
physica status solidi (a). 208:2655-2660
Nano-crystalline c-axis oriented InxGa1−xN (x = 0.93, 0.63, 0.5, 0.36 and 0.18) thin films were prepared by modified activated reactive evaporation technique. Phase segregation was clearly observed for x = 0.5 composition. Scanning electron microsc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0557b3eada3c21540c3ada3879902041
https://doi.org/10.1002/pssa.201026727
https://doi.org/10.1002/pssa.201026727
Publikováno v:
International Journal of Nanoscience. 10:141-145
Indium-rich In x Ga 1-x N thin films were prepared on glass substrates by a mixed source modified activated reactive evaporation technique. All the films exhibit hexagonal wurtzite structure preferentially oriented along the c-axis. The band gap valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac803ffbda16889f126eec5c2f23e120
https://doi.org/10.1142/s0219581x11007612
https://doi.org/10.1142/s0219581x11007612