Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Mahapatra, Suddhasatta"'
Autor:
Bhunia, Swagata, Chatterjee, Soumyadip, Sarkar, Ritam, Nag, Dhiman, Mahapatra, Suddhasatta, Laha, Apurba
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counterparts. However, NWs-based devices face significant challenges because
Externí odkaz:
http://arxiv.org/abs/2410.22924
Autor:
Jangir, Varsha, Shah, Devashish, Samanta, Sounak, Rastogi, Siddarth, Beere, Harvey E., Ritchie, David A., Gupta, Kantimay Das, Mahapatra, Suddhasatta
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source and drain
Externí odkaz:
http://arxiv.org/abs/2409.14390
Autor:
Barik, Bikash C., Chakraborti, Himadri, Pal, Buddhadeb, Jain, Aditya K., Bhunia, Swagata, Samanta, Sounak, Laha, Apurba, Mahapatra, Suddhasatta, Gupta, K. Das
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungat
Externí odkaz:
http://arxiv.org/abs/2406.09607
Autor:
Bhunia, Swagata, Sarkar, Ritam, Nag, Dhiman, Jana, Dipankar, Mahapatra, Suddhasatta, Laha, Apurba
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have several p
Externí odkaz:
http://arxiv.org/abs/2208.08724
Autor:
Bhunia, Swagata, Sarkar, Ritam, Nag, Dhiman, Ghosh, Kankat, Khiangte, Krista R, Mahapatra, Suddhasatta, Laha, Apurba
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges associated with both NW-growth and device processing. Towards this en
Externí odkaz:
http://arxiv.org/abs/1812.02443
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Autor:
Khiangte, Krista R, Rathore, Jaswant S, Sharma, Vaibhav, Laha, Apurba, Mahapatra, Suddhasatta
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated that by suitably controlling the thickness and the growth recipe of t
Externí odkaz:
http://arxiv.org/abs/1807.09718
Autor:
Khiangte, Krista R, Rathore, Jaswant S, Das, Sudipta, Pokharia, Ravinder S, Schmidt, Jan, Osten, H. J., Laha, Apurba, Mahapatra, Suddhasatta
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in the Volmer-W
Externí odkaz:
http://arxiv.org/abs/1801.02462