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pro vyhledávání: '"Mahamudul Hassan Fuad"'
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 9, Iss , Pp 100679- (2024)
In this paper, we examine the response of charge carriers in a dual-gate graphene field-effect transistor (GFET). We have conducted an investigation into the input-output properties of both monolayer and bilayer graphene channels. Additionally, we de
Externí odkaz:
https://doaj.org/article/3ea5937d1d2c4e6585e7d3bfe8994191
