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pro vyhledávání: '"Mahadevaiaha, Mamathamba Kalishettyhalli"'
Autor:
Petryk, Dmytro, Dyka, Zoya, Perez, Eduardo, Mahadevaiaha, Mamathamba Kalishettyhalli, Kabin, Ievgen, Wenger, Christian, Langendoerfer, Peter
Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail
Externí odkaz:
http://arxiv.org/abs/2103.12435
