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Gallium-arsenide-antimonide-based indium phosphide double heterojunction bipolar transistors (InP/GaAsSb DHBTs) have emerged as leading contenders for >0.3 THz integrated circuits aimed at high-data-rate communication systems, radar, THz-spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::961f57bc29da91c9f2907570288f26a5
https://hdl.handle.net/20.500.11850/577282
https://hdl.handle.net/20.500.11850/577282
