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pro vyhledávání: '"Mah Wei Shun"'
Autor:
Ruslinda A. Rahim, Subash C. B. Gopinath, Mah Wei Shun, M. K. Md Arshad, Mohamad Faris Mohamad Fathil, Mohammad Nuzaihan Md Nor
Publikováno v:
2019 IEEE International Conference on Sensors and Nanotechnology.
This paper demonstrated the application of several dielectric materials with different dielectric constant (k) (i.e. silicon dioxide (SiO 2 ), aluminium oxide (Al 2 O 3 ), and hafnium oxide (Hf02) with $k$ values of 3.9, 9.0, and 25.0, respectively)