Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Magorrian, S J"'
Autor:
Magorrian, S. J., Graham, A. J., Yeung, N., Ferreira, F., Nguyen, P. V., Barinov, A., Fal'ko, V. I., Wilson, N. R., Hine, N. D. M.
Publikováno v:
2D Materials 9, 045036 (2022)
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transit
Externí odkaz:
http://arxiv.org/abs/2207.09433
Autor:
Magorrian, S. J., Enaldiev, V. V., Zólyomi, V., Ferreira, Fábio, Fal'ko, Vladimir I., Ruiz-Tijerina, David A.
Publikováno v:
Phys. Rev. B 104, 125440 (2021)
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moir\'e potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybr
Externí odkaz:
http://arxiv.org/abs/2106.06058
Autor:
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I. V., Fal'ko, V. I.
Publikováno v:
Phys. Rev. B 104, 125432 (2021)
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrin
Externí odkaz:
http://arxiv.org/abs/2106.04719
Publikováno v:
Sci. Rep. 11, 13422 (2021)
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We
Externí odkaz:
http://arxiv.org/abs/2103.06093
Publikováno v:
Phys. Rev. B 103, 094118 (2021)
We use dispersion-corrected density-functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technological
Externí odkaz:
http://arxiv.org/abs/2101.11733
Publikováno v:
2D Mater. 8 025030 (2021)
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trapping of charge carriers and excitons by ferroelectric polarisation and pie
Externí odkaz:
http://arxiv.org/abs/2011.04579
Publikováno v:
Phys. Rev. Lett. 124, 206101 (2020)
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2
Externí odkaz:
http://arxiv.org/abs/1911.12804
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Phys. Rev. B 96, 195428 (2017)
We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in bot
Externí odkaz:
http://arxiv.org/abs/1711.03402
Publikováno v:
Phys. Rev. B 94, 245431 (2016)
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parame
Externí odkaz:
http://arxiv.org/abs/1611.00262