Zobrazeno 1 - 10
of 3 441
pro vyhledávání: '"Magnetic tunnel junction"'
Autor:
Mohammad Javad Adel, Mohammad Hadi Rezayati, Mohammad Hossein Moaiyeri, Abdolah Amirany, Kian Jafari
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024)
Abstract The ubiquitous presence of electronic devices demands robust hardware security mechanisms to safeguard sensitive information from threats. This paper presents a physical unclonable function (PUF) circuit based on magnetoresistive random acce
Externí odkaz:
https://doaj.org/article/9f225083f21d4d969a8397123b8590b3
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
AbstractHybrid magnetic tunnel junction (MTJ)/CMOS circuits based on the computation-in-memory (CIM) architecture are contemplated as the future generation of digital integrated circuits. It overcomes the limitations of von-Neumann architecture by of
Externí odkaz:
https://doaj.org/article/9579303eb2f948d3a353a3404d3abbb3
Autor:
Aijaz H. Lone, Arnab Ganguly, Hanrui Li, Nazek El-Atab, Gianluca Setti, Gobind Das, and Hossein Fariborzi
Publikováno v:
IEEE Access, Vol 12, Pp 149850-149860 (2024)
The exceptional properties of skyrmion devices, including their miniature size, topologically protected nature, and low current requirements, render them highly promising for energy-efficient neuromorphic computing applications. Examining the creatio
Externí odkaz:
https://doaj.org/article/e1ec57b469494abbbbbadb9fc956f67a
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 31-39 (2024)
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs. R
Externí odkaz:
https://doaj.org/article/5ea8eca713e4442597a3ac1a5272f083
Autor:
Haiyang Pan, Anil Kumar Singh, Chusheng Zhang, Xueqi Hu, Jiayu Shi, Liheng An, Naizhou Wang, Ruihuan Duan, Zheng Liu, Stuart S. P. Parkin, Pritam Deb, Weibo Gao
Publikováno v:
InfoMat, Vol 6, Iss 6, Pp n/a-n/a (2024)
Abstract The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean
Externí odkaz:
https://doaj.org/article/a855274e373f4556a49019d36ff3e788
Publikováno v:
Measurement: Sensors, Vol 32, Iss , Pp 101063- (2024)
Complementary Metal Oxide Silicon (CMOS) technology faces a major concern in power dissipation due to the scale-down of technology nodes to the nanoscale. To, resolve this problem, logic-in-memory (LIM) structures are researched as a solution. A spin
Externí odkaz:
https://doaj.org/article/cb6618dd7ffd4a2b96e644032a5bf97b
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 171-180 (2023)
In light of the growing prevalence of Internet of Things (IoT) devices, it has become essential to incorporate cryptographic protection techniques for high-security applications. Since IoT devices are resource-constraints in terms of power and area,
Externí odkaz:
https://doaj.org/article/2f4198466b4f4730b6df7a0183a072d9
Autor:
Huang, L.1,2, Yuan, Z. H.2, Tao, B. S.2, Wan, C. H.2, Guo, P.2, Zhang, Q. T.2, Yin, L.2, Feng, J. F.2, Nakano, T.3, Naganuma, H.3, Liu, H. F.4, Yan, Y.1, Han, X. F.2 xfhan@iphy.ac.cn
Publikováno v:
Journal of Applied Physics. 2017, Vol. 122 Issue 11, p113903-1-113903-6. 6p. 1 Diagram, 1 Chart, 3 Graphs.
Autor:
Jaya, Selvaraj1 smathi@igcar.gov.in
Publikováno v:
European Physical Journal B: Condensed Matter. Jun2017, Vol. 90 Issue 6, p1-12. 12p.
Autor:
Yuki Hibino, Tatsuya Yamamoto, Kay Yakushiji, Tomohiro Taniguchi, Hitoshi Kubota, Shinji Yuasa
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a suff
Externí odkaz:
https://doaj.org/article/e3ff599eefef479eba3e9534646e77a3