Zobrazeno 1 - 10
of 20 056
pro vyhledávání: '"Magnetic tunnel junction"'
Autor:
Geiskopf, S., Igarashi, J., Malinowski, G., Lin, J. -X., Gorchon, J., Mangin, S., Hohlfeld, J., Lacour, D., Hehn, M.
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm
Externí odkaz:
http://arxiv.org/abs/2412.16005
Autor:
Yan, Gerald Q., McLaughlin, Nathan, Yamamoto, Tatsuya, Li, Senlei, Nozaki, Takayuki, Yuasa, Shinji, Du, Chunhui Rita, Wang, Hailong
Publikováno v:
Nano Letters 2024 24 (45), 14273-14278
Nitrogen-vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of the major challenges for designing NV-based hybrid systems for QIS app
Externí odkaz:
http://arxiv.org/abs/2410.12129
This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high powe
Externí odkaz:
http://arxiv.org/abs/2409.09268
Autor:
Kaiser, Md Abdullah-Al, Datta, Gourav, Athas, Jordan, Duffee, Christian, Jacob, Ajey P., Amiri, Pedram Khalili, Beerel, Peter A., Jaiswal, Akhilesh R.
The vast amount of data generated by camera sensors has prompted the exploration of energy-efficient processing solutions for deploying computer vision tasks on edge devices. Among the various approaches studied, processing-in-pixel integrates massiv
Externí odkaz:
http://arxiv.org/abs/2410.10592
In spiking neural networks, neuron dynamics are described by the biologically realistic integrate-and-fire model that captures membrane potential accumulation and above-threshold firing behaviors. Among the hardware implementations of integrate-and-f
Externí odkaz:
http://arxiv.org/abs/2405.14851
Autor:
Safeer, C. K., Keatley, Paul S., Skowroński, Witold, Mojsiejuk, Jakub, Yakushiji, Kay, Fukushima, Akio, Yuasa, Shinji, Bedau, Daniel, Casanova, Fèlix, Hueso, Luis E., Hicken, Robert J., Pinna, Daniele, van der Laan, Gerrit, Hesjedal, Thorsten
Publikováno v:
Phys. Rev. Applied 22, 024019 (2024)
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capaci
Externí odkaz:
http://arxiv.org/abs/2405.05537
Autor:
Ghemes, Crina1 (AUTHOR) cghemes@phys-iasi.ro, Tibu, Mihai1 (AUTHOR) cghemes@phys-iasi.ro, Dragos-Pinzaru, Oana-Georgiana1 (AUTHOR), Ababei, Gabriel1 (AUTHOR), Stoian, George1 (AUTHOR), Lupu, Nicoleta1 (AUTHOR), Chiriac, Horia1 (AUTHOR)
Publikováno v:
Materials (1996-1944). Jun2024, Vol. 17 Issue 11, p2554. 17p.
Akademický článek
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Akademický článek
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Autor:
Devi, Reeta1 (AUTHOR) reetadevi@dibru.ac.in, Dutta, Nimisha1 (AUTHOR) nimishadutta@dibru.ac.in, Boruah, Arindam1 (AUTHOR) arindamboruah@dibru.ac.in, Acharjee, Saumen1 (AUTHOR) saumenacharjee@dibru.ac.in
Publikováno v:
Journal of Applied Physics. 11/7/2024, Vol. 136 Issue 17, p1-20. 20p.