Zobrazeno 1 - 10
of 1 077
pro vyhledávání: '"Magnetic Tunnel Junction (Mtj)"'
Autor:
Mohammad Javad Adel, Mohammad Hadi Rezayati, Mohammad Hossein Moaiyeri, Abdolah Amirany, Kian Jafari
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024)
Abstract The ubiquitous presence of electronic devices demands robust hardware security mechanisms to safeguard sensitive information from threats. This paper presents a physical unclonable function (PUF) circuit based on magnetoresistive random acce
Externí odkaz:
https://doaj.org/article/9f225083f21d4d969a8397123b8590b3
Publikováno v:
In Journal of Magnetism and Magnetic Materials 15 February 2025 614
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 171-180 (2023)
In light of the growing prevalence of Internet of Things (IoT) devices, it has become essential to incorporate cryptographic protection techniques for high-security applications. Since IoT devices are resource-constraints in terms of power and area,
Externí odkaz:
https://doaj.org/article/2f4198466b4f4730b6df7a0183a072d9
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 99-107 (2023)
Binary neural networks (BNNs) have shown an immense promise for resource-constrained edge artificial intelligence (AI) platforms. However, prior designs typically either require two bit-cells to encode signed weights leading to an area overhead, or r
Externí odkaz:
https://doaj.org/article/330e2de940344536b49ad82d2339d95f
Publikováno v:
IEEE Access, Vol 11, Pp 118944-118961 (2023)
Spintronics has been garnering great success in resolving the shortcomings of conventional charge-based electronics and von-Neumann architecture by offering novel computational paradigms almost devoid of leakage effects and volatility issues of tradi
Externí odkaz:
https://doaj.org/article/316b68bb2a0b4494aaf4b6c069aaa98b
Autor:
Nicholas Zogbi, Samuel Liu, Christopher H. Bennett, Sapan Agarwal, Matthew J. Marinella, Jean Anne C. Incorvia, T. Patrick Xiao
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 1, Pp 65-73 (2023)
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and ra
Externí odkaz:
https://doaj.org/article/965ae70cc09849eeb776d3308f958d19
Autor:
Brandon R. Zink, Yang Lv, Masoud Zabihi, Husrev Cilasun, Sachin S. Sapatnekar, Ulya R. Karpuzcu, Marc D. Riedel, Jian-Ping Wang
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 1, Pp 29-37 (2023)
Stochastic computing (SC) has emerged as a promising solution for performing complex functions on large amounts of data to meet future computing demands. However, the hardware needed to generate random bit-streams using conventional CMOS-based techno
Externí odkaz:
https://doaj.org/article/c9f3e83fef974b5abe583fe39109a981
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 102-108 (2023)
Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficienc
Externí odkaz:
https://doaj.org/article/3b79da1c8f5e4dac9efa70eee02685cb
Publikováno v:
IEEE Access, Vol 11, Pp 8150-8158 (2023)
The globalization of the Integrated Circuits supply chain has increased threats from untrusted entities involved in the process. Several mechanisms, such as logic locking, watermarking and split manufacturing, are widely used to ensure hardware secur
Externí odkaz:
https://doaj.org/article/2d9530a93a8a4173855b90cec3122aa5
Publikováno v:
Applied Sciences, Vol 14, Iss 3, p 1229 (2024)
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows pro
Externí odkaz:
https://doaj.org/article/414c431ea0f1485bb28fcf8b126329ff