Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Magne Saxegaard"'
Publikováno v:
CIRED - Open Access Proceedings Journal. 2017:136-139
Medium-voltage (MV) switchgear experiences a rise in temperature during normal operation due to ohmic losses in conductors and contacts. If the temperature rise is too high, the switching device may be degraded. The focus of this study is to find a v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66fda951cb1351b9cca5620e1f10a0f4
https://doi.org/10.1049/oap-cired.2017.0349
https://doi.org/10.1049/oap-cired.2017.0349
Autor:
Maik Hyrenbach, Per Arne Wang, Theo Van Rijn, Robert Vosse, Magne Saxegaard, Denny Harmsen, Thor Endre, Martin Kristoffersen
Publikováno v:
CIRED - Open Access Proceedings Journal. 2017:412-415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514e21e8d35732402b7f2764cddaf5c6
https://doi.org/10.1049/oap-cired.2017.0658
https://doi.org/10.1049/oap-cired.2017.0658
Autor:
Elham Attar, Martin Kristoffersen, Henrik Landsverk, Saskia Scheel, Anna Di-Gianni, Ole Granhaug, Magne Saxegaard
Publikováno v:
CIRED - Open Access Proceedings Journal. 2017:286-288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7e62847f37a58859fe1025a9ded5b0
https://doi.org/10.1049/oap-cired.2017.0614
https://doi.org/10.1049/oap-cired.2017.0614
Publikováno v:
Scientific Computing in Electrical Engineering ISBN: 9783319755373
A simulation framework for dielectric design of high voltage devices has been presented. It is based on a simplified modeling of discharge characteristics including propagation path, breakdown and inception voltages. A 3-stage procedure of evaluating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea50c69a7b9f08ec4c338e71a00a37ab
https://doi.org/10.1007/978-3-319-75538-0_23
https://doi.org/10.1007/978-3-319-75538-0_23
Publikováno v:
ACS Applied Materials & Interfaces. 7:8525-8532
The epitaxial growth of artificial two-dimensional metals at interfaces plays a key role in fabricating heterostructures for nanoelectronics. Here, we present the growth of bismuth nanostructures on highly oriented pyrolytic graphite (HOPG) under ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68769ac7d930ca8557efa5b367c43f35
https://doi.org/10.1021/acsami.5b00264
https://doi.org/10.1021/acsami.5b00264
Publikováno v:
2016 IEEE International Conference on High Voltage Engineering and Application (ICHVE).
We present the Virtual High-Voltage Lab, a tool aimed at simulation-based prediction of breakdown in dielectric high-voltage tests for virtual high-voltage and medium-voltage devices created in CAD systems. Not only does it make a quantitative evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99be134bcd0f8abcda5647cacc33463
https://doi.org/10.1109/ichve.2016.7800937
https://doi.org/10.1109/ichve.2016.7800937
Publikováno v:
22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013).
Environmental concerns related to the greenhouse effect of SF6 have driven changes to take place in the power distribution industry. This paper discusses the main challenges for next generation medium voltage (MV) ring main units (RMU) using new tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07709bd4ecefe176d502bc63c8538c94
https://doi.org/10.1049/cp.2013.0743
https://doi.org/10.1049/cp.2013.0743
Training and recovery of exchange bias in FeNi/Cu/Co/FeMn spin valves have been studied by magnetoresistance curves with field sweep rates from 1000 to 4800 Oe/s. It is found that training and recovery of exchange field are proportional to the logari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd291613f1d293f31616cbef0cc2e16b
http://arxiv.org/abs/1201.0358
http://arxiv.org/abs/1201.0358
Publikováno v:
Journal of Applied Physics. 107:103909
We present results from scanning tunneling microscopy based point-contact measurements of the local resistance in octagon shaped, Co(20 nm)/Cu (5 nm)/Fe(19)Ni(81)(2.5 nm) spin-valve rings. Through this technique one can detect the magnetoresistance w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afdafd47c0124b91e581202509ed5b0f
https://doi.org/10.1063/1.3407539
https://doi.org/10.1063/1.3407539