Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Magis, T"'
Autor:
Lespiaux, J., Deprat, F., Rodrigues Goncalves, B., Souc, J., Leverd, F., Juhel, M., Mattei, J.-G., Giroud-Garampon, C., Roman, A., Magis, T., Hartmann, J.M.
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2022 144
Autor:
Bourgeois, G., Meli, V., Al Mamun, F., Mazen, F., Nolot, E., Martinez, E., Barnes, J.-P., Bernier, N., Jannaud, A., Laulagnet, F., Hemard, B., Castellani, N., Bernard, M., Sabbione, C., Milesi, F., Magis, T., Socquet-Clerc, C., Coig, M., Garrione, J., Cyrille, M.-C., Charpin, C., Navarro, G., Andrieu, F.
Publikováno v:
In Microelectronics Reliability November 2021 126
Autor:
Laguerre, J., Bocquet, Marc, Billoint, O., Martin, S., Coignus, J., Carabasse, C., Magis, T., Dewolf, T., Andrieu, F., Grenouillet, L.
Publikováno v:
IMW 2023-2023 IEEE International Memory Workshop
IMW 2023-2023 IEEE International Memory Workshop, IEEE, May 2023, Monterey (CA), United States. pp.1-4, ⟨10.1109/IMW56887.2023.10145972⟩
IMW 2023-2023 IEEE International Memory Workshop, IEEE, May 2023, Monterey (CA), United States. pp.1-4, ⟨10.1109/IMW56887.2023.10145972⟩
International audience; The Memory Window (MW) of BEOL-integrated Si:HfO 2-based 16kbit 1T1C FeRAM arrays is shown to be significantly improved (×3) by etching the ferroelectric (FE) film of the Ferroelectric CAPacitor (FeCAP). To estimate the MW ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4deb07b3b5c62743794bbac0d0551285
https://hal.science/hal-04130967
https://hal.science/hal-04130967
Autor:
Bourgeois, G., Meli, V., Antonelli, R., Socquet-Clerc, C., Magis, T., Laulagnet, F., Hemard, B., Bernard, M., Fellouh, L., Dezest, P., Krawczyk, J., Dominguez, S., Baudin, F., Garrione, J., Pellissier, C., Dallery, J.-A., Castellani, N., Cyrille, M.-C., Charpin, C., Andrieu, F., Navarro, G.
Publikováno v:
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
International audience; In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::436c262ec3bf28612b19a203a413dadd
https://doi.org/10.1109/edtm55494.2023.10102961
https://doi.org/10.1109/edtm55494.2023.10102961
Autor:
Lopez, J. Minguet, Rummens, F., Reganaz, L., Heraud, A., Hirtzlin, T., Grenouillet, L., Navarro, G., Bernard, M., Carabasse, C., Castellani, N., Meli, V., Martin, S., Magis, T., Vianello, E., Sabbione, C., Deleruyelle, D., Bocquet, M., Portal, J. M., Molas, G., Andrieu, F.
Publikováno v:
IMW 2022-IEEE International Memory Workshop
IMW 2022-IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩
2022 IEEE International Memory Workshop (IMW)
IMW 2022-IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩
2022 IEEE International Memory Workshop (IMW)
International audience; We experimentally validated the sub-threshold reading strategy in OxRAM+OTS crossbar arrays for low precision inference in Binarized Neural Networks. In order to optimize the 1S1R sub-threshold current margin, an experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::236c263ed3c5a7f751695823256c7c11
https://cea.hal.science/cea-03707392
https://cea.hal.science/cea-03707392
Autor:
Francois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J., Martin, S., Castellani, N., Magis, T., Grampeix, H., van Duijn, S., Mounet, C., Chiquet, P., Schroeder, U., Slesazeck, S., Mikolajick, T., Nowak, E., Bocquet, Marc, Barrett, N., Andrieu, F., Grenouillet, L.
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, pp.1-7. ⟨10.1109/TED.2021.3138360⟩
IEEE Transactions on Electron Devices, 2022, pp.1-7. ⟨10.1109/TED.2021.3138360⟩
International audience; 16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). 0 state and 1 state distributions measured on the arrays demonstrate perfect yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::741ad4caacdd64bceb9f3b9ad0c5e3b9
https://hal.science/hal-03596923/document
https://hal.science/hal-03596923/document
Autor:
Ernst, T., Barraud, S., Tachi, K., Vizioz, C., Magis, T., Brianceau, P., Hubert, A., Vulliet, N., Hartmann, J.-M., Cassé, M.
Publikováno v:
In Microelectronic Engineering 2011 88(7):1198-1202
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Francois, T, Coignus, J, Makosiej, A, Giraud, B, Carabasse, C, Barbot, J, Martin, S, Castellani, N, Magis, T, Grampeix, H, van Duijn, S, Mounet, C, Chiquet, P, Schroeder, U, Slesazeck, S, Mikolajick, T, Nowak, E, Bocquet, Marc, Barrett, N, Andrieu, F, Grenouillet, L
Publikováno v:
67th Annual IEEE International Electron Devices Meeting (IEDM) 2021
67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, Dec 2021, San Francisco, United States. ⟨10.1109/IEDM19574.2021.9720640⟩
67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, Dec 2021, San Francisco, United States. ⟨10.1109/IEDM19574.2021.9720640⟩
International audience; 16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7326dae07046b0245f54383ffd6f4a9
https://hal.science/hal-03596974
https://hal.science/hal-03596974