Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform

Autor: K. Dabertrand, Patrice Gergaud, Magali Gregoire, Ph. Rodriguez, Quentin Rafhay, F. Boyer, N. Coudurier, Fabrice Nemouchi, Christophe Jany

Publikováno v: IEEE Transactions on Electron Devices. 67:2495-2502

Titanium-based contacts are envisioned for the integration of III–V device contacts on a 300-mm platform, such as photodetectors, semiconductor optical amplifiers (SOAs), and III–V silicon hybrid lasers. For the first time, the impact of the ther

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ec1efce21896c177966e1fcb606cf5c
https://doi.org/10.1109/ted.2020.2985766

Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions

Autor: Nathalie Vulliet, Yohan Desieres, Magali Gregoire, C. Perrot, Delphine Marris-Morini, Ismael Charlet, K. Rovayaz, Sylvain Guerber, Lucas Deniel, L. Mazet, Sebastien Kerdiles, Stephane Monfray, K. Ribaud, Philippe Grosse, J. Lassarre, S. Messaoudène, Frederic Boeuf, C. Euvrard-Colnat, Sebastien Cremer, P. Acosta-Alba

Publikováno v: Silicon Photonics XVI.

Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a52c4c3123f546127ab42e6dc8b72b1
https://doi.org/10.1117/12.2577806

IMPACT OF NANOSECOND LASER ENERGY DENSITY ON THE C40-TiSi2 FORMATION AND C54-TiSi2 TRANSFORMATION TEMPERATURE

Autor: Magali Gregoire, Dominique Mangelinck, S. Kerdiles, K. Dabertrand, P. Benigni, Laura Esposito, Jean-Gabriel Mattei

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩

International audience; The formation of Ti based contacts in new image sensors CMOS technologies is limited by the requirement of low thermal budget. The objectives for these new 3D-technologies are to promote ohmic, low resistance, repeatable and r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b594fcad0cf7b0d9d2d25fc02e7fd7b
https://hal.science/hal-02922876

Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers

Autor: Christophe Jany, V. Amalberg, Quentin Rafhay, Magali Gregoire, F. Boyer, Bertrand Szelag, J. Da Fonseca, Ph. Rodriguez

Publikováno v: 2019 IEEE 16th International Conference on Group IV Photonics (GFP).

Electrical properties of CMOS-compatible titanium contacts on n-InP and p-In0.53Ga0.47As using 300 mm tools, in the scope of integrating them on III-V / Si hybrid lasers, are presented. Electrical behaviors after i) processing, ii) integration and ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::365641fc6158d57dafe0bdc46247fddb
https://doi.org/10.1109/group4.2019.8926115

Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

Autor: M. Lemang, Ph. Rodriguez, Magali Gregoire, Marc Juhel, Patrice Gergaud, B. Saidi, Dominique Mangelinck, Fabrice Nemouchi

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2018, 202, pp.25-30. ⟨10.1016/j.mee.2018.10.005⟩
Microelectronic Engineering, 2018, 202, pp.25-30. ⟨10.1016/j.mee.2018.10.005⟩

This study focuses on silicide formation on phosphorus in-situ doped samples, the phosphorus diffusion and its distribution during the solid-state reaction. The silicidation is achieved with a 16 nm thin film of Ni0.9Pt0.1 followed by a two steps ann

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70ad06bd5b14638723092c488ee4c283
https://hal.archives-ouvertes.fr/hal-02403309