Výsledky vyhledávání - "Maeyama, Yusuke"

Suppressed surface-recombination structure and surface passivation for improving current gain of 4H-SiC BJTs

Autor: Masaaki Shimizu, Yuki Negoro, Masashi Sato, Kenichi Nonaka, Akihiko Horiuchi, Hideki Hashimoto, Maeyama Yusuke, Seiichi Yokoyama, Kensuke Iwanaga, Hiroaki Iwakuro

Publikováno v: Silicon Carbide: Power Devices and Sensors, Volume 2

4H-SiC bipolar junction transistors (BJTs) are one of the promising candidates for next-generation power devices. 4H-SiC BJTs have the advantages of low on-resistance and high temperature capability. On the other hand, high common emitter current gai

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c99ceb45f41ef73afa4b1af5951514be
https://doi.org/10.1002/pssa.200925053

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A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Autor: Masaaki Shimizu, Maeyama Yusuke, Akihiko Horiuchi, Yuki Negoro, Hideki Hashimoto, Kensuke Iwanaga, Masashi Sato, Seiichi Yokoyama, Hiroaki Iwakuro, Kenichi Nonaka

Publikováno v: Materials Science Forum. :821-824

A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::303b94c13c748271afd678ddb1ce3cc7
https://doi.org/10.4028/www.scientific.net/msf.615-617.821

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Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Autor: Hideki Hashimoto, Kensuke Iwanaga, Masaaki Shimizu, Yuki Negoro, Kenichi Nonaka, Masashi Sato, Akihiko Horiuchi, Maeyama Yusuke, Hiroaki Iwakuro, Seiichi Yokoyama

Publikováno v: Materials Science Forum. :837-840

Surface passivation of 4H-SiC has been investigated for high current-gain bipolar junction transistors (BJTs). For the characterization of surface passivation, we have introduced the product “sp•Ls” of a surface recombination velocity (sp) and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cea052662b3c00fb9106adc30b3970da
https://doi.org/10.4028/www.scientific.net/msf.615-617.837

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Device Simulation Model for Transient Analysis of SiC-SBD

Autor: F. Honma, Masaaki Shimizu, Masaaki Tomita, Yutaka Fukuda, Mitsuyoshi Sato, Hiroaki Iwakuro, Maeyama Yusuke, J. Ono

Publikováno v: Materials Science Forum. :975-978

We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f65c9509c81750b9565962414d31784f
https://doi.org/10.4028/www.scientific.net/msf.600-603.975

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Reverse Biased Electrochemical Etching of SiC-SBD

Autor: Masaaki Shimizu, Yusuke Fukuda, Koichi Nishikawa, Hiroaki Iwakuro, Masashi Sato, Maeyama Yusuke

Publikováno v: Materials Science Forum. :419-422

With development of very-low-micropipe-density substrate, reduction of other device killer defects becomes important for large size power devices. We employed reverse biased electrochemical etching (RECE) method in order to elucidate where the curren

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a544fd66eea032e9aff8950ca613554
https://doi.org/10.4028/www.scientific.net/msf.556-557.419

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Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Autor: J. Ono, Maeyama Yusuke, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, Hiroaki Iwakuro, Kouichi Nishikawa

Publikováno v: Materials Science Forum. :867-870

The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::509f590bba86d16129151f7a4e37dedd
https://doi.org/10.4028/www.scientific.net/msf.527-529.867

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