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pro vyhledávání: '"Maeva Sultan"'
Autor:
C. Hatem, G. Maxwell, Michael Schmidt, Emmanuele Galluccio, Nikolay Petkov, Alan Hydes, Brenda Long, K. Thomas, Noel Kennedy, D. O'Connell, Colin Lyons, Paul K. Hurley, Brendan Sheehan, Maeva Sultan, Gioele Mirabelli, James Connolly, Ray Duffy, Emanuele Pelucchi, Justin D. Holmes
Publikováno v:
Journal of Applied Physics. 124:045703
Dopant incorporation in Si can be done in situ during epitaxial growth, or ex situ for localised material modification from a variety of sources including ion, solid, liquid, or gas. Gas-phase doping has the advantage that it does not require a thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::905209412c16128a76b9f12ed6cefe57
https://doi.org/10.1063/1.5034213
https://doi.org/10.1063/1.5034213
