Stress induced charge trapping effects in SiO[sub 2]/Al[sub 2]O[sub 3] gate stacks with TiN electrodes.

Autor: Kerber, A., Cartier, F., Groeseneken, G., Maes, H. F., Schwalke, U.

Publikováno v: Journal of Applied Physics; 11/15/2003, Vol. 94 Issue 10, p6627-6630, 4p, 2 Diagrams, 2 Charts, 4 Graphs